Contents
Semiconductors

Vol. 45, No. 11, 2011

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Superionic Conductivity and Switching Effect with Memory in TlInSe₂ and TlInTe₂ Crystals

R. M. Sardarly, O. A. Samedov, A. P. Abdullayev, F. T. Salmanov, O. Z. Alekperov,
E. K. Huseynov, and N. A. Aliyeva p. 1387  abstract

Electronic Properties of Semiconductors

Electrical Properties of PbTe Single Crystals with Excess Tellurium

G. Z. Bagiyeva, N. B. Mustafayev, G. Dj. Abdinova, and D. Sh. Abdinov p. 1391  abstract

Temperature Dependence of the Band Gap of FeIn₂S₄ Single Crystals

I. V. Bodnar and S. A. Pavlukovets p. 1395  abstract

Anomalously Low Thermal Conductivity and Thermoelectric Properties
of New Cationic Clathrates in the Sn–In–As–I System

A. V. Shevelkov, E. A. Kelm, A. V. Olenev, V. A. Kulbachinskii, and V. G. Kytin p. 1399  abstract

Low-Temperature Investigations of Chemically Deposited Films
of Substitutional Solid Solutions Based on Lead and Tin (II) Selenides

V. Ph. Markov, H. N. Mukhamedzyanov, L. N. Maskaeva, and Z. I. Smirnova p. 1404  abstract

Magnetic Properties of Fe_xMn_1–xIn₂S₄ Alloy Single Crystals

I. V. Bodnar and S. V. Trukhanov p. 1408  abstract

Surfaces, Interfaces, and Thin Films

Specific Features and Nature of the 890 nm Photoluminescence Band Detected
in SiO_x Films after Low-Temperature Annealing

N. A. Vlasenko, N. V. Sopinskii, E. G. Gule, E. G. Manoilov, P. F. Oleksenko,
L. I. Veligura, and M. A. Mukhlyo p. 1414  abstract

Modification of Electrical and Optical Properties of ZnO Films under Ultraviolet Irradiation

A. N. Gruzintsev and W. T. Volkov p. 1420  abstract

Optical Properties of Epitaxial Al_xIn_1–xSb Alloy Layers

O. S. Komkov, A. N. Semenov, D. D. Firsov, B. Ya. Meltser, V. A. Solov’ev,
T. V. Popova, A. N. Pikhtin, and S. V. Ivanov p. 1425  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Electroluminescence at a Wavelength of 1.54 m in Si:Er/Si Structures Consisting
of a Number of p–n Junctions

V. P. Kuznetsov, M. V. Stepihova, V. B. Shmagin, M. O. Marychev, N. A. Alyabina,
M. V. Kuznetsov, B. A. Andreev, A. V. Kornaukhov, O. N. Gorshkov, and Z. F. Krasilnik p. 1430  abstract

Spinodal Decomposition of Ga_xIn_1–xAs_yP_1–y Quaternary Alloys

P. V. Seredin, A. V. Glotov, V. E. Ternovaya, E. P. Domashevskaya, I. N. Arsentyev,
L. S. Vavilova, and I. S. Tarasov p. 1433  abstract

Spin Filtration of Unpolarized Electrons by Impurity Centers in Semiconductors

E. G. Bobin and V. L. Berdinskiy p. 1441  abstract

Shubnikov–de-Haas and de-Haas–van-Alphen Oscillations in Silicon Nanostructures

N. T. Bagraev, E. S. Brilinskaya, D. S. Gets, L. E. Klyachkin,
A. M. Malyarenko, and V. V. Romanov p.1447  abstract

Amorphous, Vitreous, and Organic Semiconductors

Features of the Spectral Dependences of Transmittance of Organic Semiconductors Based
on Tert-Butyl Substituted Lutetium Phthalocyanine Molecules

I. A. Belogorokhov, E. V. Tikhonov, M. A. Dronov, L. I. Belogorokhova,
Yu. V. Ryabchikov, L. G. Tomilova, and D. R. Khokhlov p. 1453  abstract

Study of the Transport Properties of Organic Semiconductors Based
on Europium Diphthalocyanine and bi-tris-Phthalocyanine Complexes
with ortho-bis(Oxymethyl)Phenyl Bridge and Based on Erbium
and Europium Dinaphthalocyanine Complexes

I. A. Belogorokhov, E. V. Tikhonov, M. A. Dronov, Yu. V. Ryabchikov, N. V. Pashkova,
E. I. Kladova, L. I. Belogorokhova, L. G. Tomilova, and D. R. Khokhlov p. 1457  abstract

Crystallization Ability and Optical and Electrical Properties of Ge₁₀(Se–Te)₉₀
and Ge₃₀(Se–Te)₇₀ Chalcogenide Glassy Semiconductors

S. A. Grudinkin, V. I. Baharev, V. M. Egorov, B. T. Melekh, and V. G. Golubev p. 1462  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Polarization Characteristics of Surface Plasmon Resonance in SnO₂ Nanocluster Films

V. S. Grinevich, L. S. Maximenko, I. E. Matyash, O. N. Mischuk, S. P. Rudenko,
B. K. Serdega, V. A. Smyntyna, and L. N. Filevskaya p. 1467  abstract

Photoconductivity of PbTe:In films with Variable Microstructure

V. I. Chernichkin, A. A. Dobrovolsky, Z. M. Dashevsky, V. A. Kasiyan, V. V. Bel’kov,
S. D. Ganichev, S. N. Danilov, L. I. Ryabova, and D. R. Khokhlov p. 1474  abstract

Synthesis, Structure and Electrical Properties of (SnO₂)_x(In₂O₃)_1–x (x = 0.5–1) Nanocomposites

S. I. Rembeza, P. E. Voronov, B. M. Sinelnikov, and E. S. Rembeza p. 1479  abstract

Carbon Systems

Structurization of Submonolayer Carbon Coatings Deposited
in a Low-Pressure Microwave Plasma on Single-Crystal Silicon

V. Ya. Shanygin and R. K. Yafarov p. 1483  abstract

Physics of Semiconductor Devices

Technological Features of Irradiation of Si p⁺–n–n⁺ Diodes
with Electrons at Elevated Temperatures

I. G. Marchenko and N. E. Zhdanovich p. 1489  abstract

Capture of Charge Carriers and Output Power of a Quantum Well Laser

Z. N. Sokolova, I. S. Tarasov, and L. V. Asryan p. 1494  abstract

Effect of Temperature on the Electroluminescent Properties
of mid-IR (_max 4.4 m) Flip-Chip LEDs Based on an InAs/InAsSbP Heterostructure

A. A. Petuhov, N. D. Il’inskaya, S. S. Kizhaev, N. D. Stoyanov, and Yu. P. Yakovlev p. 1501  abstract

The Influence of Prolonged Storage and Forward-Polarity Voltage
on the Efficiency of CdS/CdTe-Based Film Solar Cells

G. S. Khrypunov, V. R. Kopach, A. V. Meriuts, R. V. Zaitsev,
M. V. Kirichenko, and N. V. Deyneko p. 1505  abstract

Fabrication, Treatment, and Testing of Materials and Structures

The Influence of Thermal Annealing on the Optical Properties
of Nanocrystalline Zinc Sulfide Films

P. N. Krylov, F. Z. Gilmutdinov, E. A. Romanov, and I. V. Fedotova p. 1512  abstract

Comparison of the Homoepitaxial Growth of AlN Crystals on Al and N surfaces

A. A. Wolfson and E. N. Mokhov p. 1517  abstract

Quantum-Chemical Study of Adsorption of 2-Propanol Molecule on a GaAs (100) Surface

M. V. Lebedev p.1519  abstract

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