Contents
Semiconductors

Vol. 44, No. 11, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Workshop

XIV Annual International Workshop “Nanophysics and Nanoelectronics 2010”

Z. F. Krasil’nik p. 1393

Terahertz Emission and Photoconductivity in n-Type GaAs/AlGaAs Quantum Wells:
the Role of Resonant Impurity States

D. A. Firsov, V. A. Shalygin, V. Yu. Panevin, G. A. Melentyev, A. N. Sofronov,
L. E. Vorobjev, A. V. Andrianov, A. O. Zakhar’in, V. S. Mikhrin, A. P. Vasil’ev,
A. E. Zhukov, L. V. Gavrilenko, V. I. Gavrilenko, A. V. Antonov, and V. Ya. Aleshkin p. 1394  abstract

Electroluminescence of InGaAs/GaAs Quantum-Size Heterostructures
with (III, Mn)V and Ni Ferromagnetic Injectors

M. M. Prokof’eva, M. V. Dorokhin, Yu. A. Danilov, A. V. Kudrin, and O. V. Vikhrova p. 1398  abstract

Carrier Heating in Quantum Wells under Optical
and Current Injection of Electron–Hole Pairs

L. E. Vorobjev, M. Ya. Vinnichenko, D. A. Firsov, V. L. Zerova, V. Yu. Panevin,
A. N. Sofronov, P. Thumrongsilapa, V. M. Ustinov, A. E. Zhukov, A. P. Vasiljev,
L. Shterengas, G. Kipshidze, T. Hosoda, and G. Belenky p. 1402  abstract

Transformation of the Plasmon Spectrum in a Grating-Gate Transistor Structure
with Spatially Modulated Two-Dimensional Electron Channel

D. V. Fateev, V. V. Popov, and M. S. Shur p. 1406  abstract

Resonance Structure of the Rate of Auger Recombination in Silicon Nanocrystals

N. V. Kurova and V. A. Burdov p. 1414  abstract

Migration of Excited Charge Carriers in Arrays
of Phosphorus-Doped Silicon Nanocrystals

V. A. Belyakov, A. A. Konakov, and V. A. Burdov p. 1418  abstract

Single-Mode Vertical-Cavity Surface Emitting Lasers
for ⁸⁷Rb-Based Chip-Scale Atomic Clock

I. A. Derebezov, V. A. Haisler, A. K. Bakarov, A. K. Kalagin, A. I. Toropov,
M. M. Kachanova, T. A. Gavrilova, O. I. Semenova, D. B. Tretyakov, I. I. Beterov,
V. M. Entin, and I. I. Ryabtsev p. 1422  abstract

Frequency Bandwidth and Conversion Loss of a Semiconductor Heterodyne
Receiver with Phonon Cooling of Two-Dimensional Electrons

E. L. Shangina, K. V. Smirnov, D. V. Morozov, V. V. Kovalyuk, G. N. Gol’tsman,
A. A. Verevkin, and A. I. Toropov p. 1427  abstract

Low-Field Anomaly of the Hall Effect in Disordered Two-Dimensional Systems

A. V. Germanenko, G. M. Minkov, O. E. Rut, I. V. Soldatov, and A. A. Sherstobitov p. 1430  abstract

Inversionless Amplification in Semiconductor Nanostructures:
A Way to Create a Frequency-Tunable Laser of Far-Infrared and Terahertz Radiation

V. A. Kukushkin p.1435  abstract

In Situ Optical Diagnostics of Growing Surfaces
in the Process of Nanoheterostructure Fabrication

I. P. Kazakov, E. V. Glazyrin, S. A. Savinov, V. I. Tsekhosh, and S. S. Shmelev p. 1441  abstract

Control of Emission Wavelength for InGaAs/GaAs Quantum Wells
and Laser Structures on Their Basis by Means of Proton Irradiation

S. A. Akhlestina, V. K. Vasil’ev, O. V. Vikhrova, Yu. A. Danilov,
B. N. Zvonkov, and S. M. Nekorkin p. 1446  abstract

Formation and “White” Photoluminescence of Nanoclusters
in SiO_x Films Implanted with Carbon Ions

A. I. Belov, A. N. Mikhaylov, D. E. Nikolitchev, A. V. Boryakov, A. P. Sidorin,
A. P. Gratchev, A. V. Ershov, and D. I. Tetelbaum p. 1450  abstract

Temperature Dependence of Inverse Population on Intracenter Transitions
of Shallow Impurity Centers in Semiconductors

E. E. Orlova p. 1457  abstract

Photoconductivity of InAs/GaAs Structures with InAs Nanoclusters
in the Near-Infrared Region

A. V. Antonov, N. V. Vostokov, M. N. Drozdov, L. D. Moldavskaya,
V. I. Shashkin, O. I. Khrykin, and A. N. Yablonskiy p. 1464  abstract

High-Resolution Emission Spectra of Pulsed Terahertz Quantum-Cascade Lasers

A. V. Ikonnikov, A. V. Antonov, A. A. Lastovkin, V. I. Gavrilenko,
Yu. G. Sadof’ev, and N. Samal p. 1467  abstract

Specific Features of the Mechanisms of Excitation
of Erbium Photoluminescence in Epitaxial Si:Er/Si Structures

A. N. Yablonskiy, B. A. Andreev, L. V. Krasilnikova, D. I. Kryzhkov,
V. P. Kuznetsov, and Z. F. Krasilnik p. 1472  abstract

Kinetics of Terahertz Photoconductivity in p-Ge under Impurity Breakdown Conditions

S. V. Morozov, K. V. Marem’yanin, I. V. Erofeeva, A. N. Yablonskiy,
A. V. Antonov, L. V. Gavrilenko, V. V. Rumyantsev, and V. I. Gavrilenko p. 1476  abstract

Special Features of the Excitation Spectra and Kinetics
of Photoluminescence of the Si_1–xGe_x:Er/Si Structures with Relaxed Heterolayers

L. V. Krasilnikova, A. N. Yablonskiy, M. V. Stepikhova, Yu. N. Drozdov,
V. G. Shengurov, and Z. F. Krasilnik p. 1480  abstract

Electrical and Luminescence Properties
of Silicon-Based Tunnel Transit-Time Light-Emitting Diodes p⁺/n⁺/n-Si:Er

V. B. Shmagin, V. P. Kuznetsov, K. E. Kudryavtsev, S. V. Obolensky,
V. A. Kozlov, and Z. F. Krasil’nik p. 1486  abstract

The Cyclotron Resonance of Holes in InGaAs/GaAs Heterostructures
with Quantum Wells in Quantizing Magnetic Fields

A. V. Ikonnikov, K. E. Spirin, V. I. Gavrilenko, D. V. Kozlov,
O. Drachenko, H. Schneider, and M. Helm p. 1492  abstract

Lateral Transport and Far-Infrared Radiation of Electrons
in In_xGa_1–xAs/GaAs Heterostructures with the Double Tunnel-Coupled
Quantum Wells in a High Electric Field

N. V. Baidus, P. A. Belevskii, A. A. Biriukov, V. V. Vainberg, M. N. Vinoslavskii,
A. V. Ikonnikov, B. N. Zvonkov, A. S. Pylypchuk, and V. N. Poroshin p. 1495  abstract

Tunneling Electron Transport through Heterobarriers with Nanometer Heterogeneities

V. A. Kozlov and V. A. Verbus p.1499  abstract

Confocal Raman Microscopy of Self-Assembled GeSi/Si(001) Islands

A. I. Mashin, A. V. Nezhdanov, D. O. Filatov, M. A. Isakov, V. G. Shengurov,
V. Yu. Chalkov, and S. A. Denisov p. 1504  abstract

The Cyclotron Resonance in Heterostructures with the InSb/AlInSb Quantum Wells

Yu. B. Vasilyev, F. Gouider, G. Nachtwei, and P. D. Buckle p. 1511  abstract

Dynamic Electron Tunneling through the Quantum Dot
under Conditions of Coulomb Blockade

S. M. Kashin and A. M. Satanin p. 1515  abstract

Physics of Semiconductor Devices

Germanium Subcells for Multijunction GaInP/GaInAs/Ge
Solar Cells

N. A. Kalyuzhnyy, A. S. Gudovskikh, V. V. Evstropov, V. M. Lantratov,
S. A. Mintairov, N. Kh. Timoshina, M. Z. Shvarts, and V. M. Andreev p. 1520  abstract

Dynamic Current Localization during Turn-Off
of High-Power Microgate Bipolar Switches

A. V. Gorbatyuk, I. V. Grekhov, and D. V. Gusin p.1529  abstract

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