Contents
Semiconductors
Vol. 44, No. 11, 2010
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Workshop
XIV Annual International Workshop Nanophysics and Nanoelectronics 2010
Z. F. Krasilnik p. 1393
Terahertz Emission and Photoconductivity in n-Type GaAs/AlGaAs Quantum Wells:
the Role of Resonant Impurity States
D. A. Firsov, V. A. Shalygin, V. Yu. Panevin, G. A. Melentyev, A. N. Sofronov,
L. E. Vorobjev, A. V. Andrianov, A. O. Zakharin, V. S. Mikhrin, A. P. Vasilev,
A. E. Zhukov, L. V. Gavrilenko, V. I. Gavrilenko, A. V. Antonov, and V. Ya. Aleshkin p. 1394 abstract
Electroluminescence of InGaAs/GaAs Quantum-Size Heterostructures
with (III, Mn)V and Ni Ferromagnetic Injectors
M. M. Prokofeva, M. V. Dorokhin, Yu. A. Danilov, A. V. Kudrin, and O. V. Vikhrova p. 1398 abstract
Carrier Heating in Quantum Wells under Optical
and Current Injection of ElectronHole Pairs
L. E. Vorobjev, M. Ya. Vinnichenko, D. A. Firsov, V. L. Zerova, V. Yu. Panevin,
A. N. Sofronov, P. Thumrongsilapa, V. M. Ustinov, A. E. Zhukov, A. P. Vasiljev,
L. Shterengas, G. Kipshidze, T. Hosoda, and G. Belenky p. 1402 abstract
Transformation of the Plasmon Spectrum in a Grating-Gate Transistor Structure
with Spatially Modulated Two-Dimensional Electron Channel
D. V. Fateev, V. V. Popov, and M. S. Shur p. 1406 abstract
Resonance Structure of the Rate of Auger Recombination in Silicon Nanocrystals
N. V. Kurova and V. A. Burdov p. 1414 abstract
Migration of Excited Charge Carriers in Arrays
of Phosphorus-Doped Silicon Nanocrystals
V. A. Belyakov, A. A. Konakov, and V. A. Burdov p. 1418 abstract
Single-Mode Vertical-Cavity Surface Emitting Lasers
for 87Rb-Based Chip-Scale Atomic Clock
I. A. Derebezov, V. A. Haisler, A. K. Bakarov, A. K. Kalagin, A. I. Toropov,
M. M. Kachanova, T. A. Gavrilova, O. I. Semenova, D. B. Tretyakov, I. I. Beterov,
V. M. Entin, and I. I. Ryabtsev p. 1422 abstract
Frequency Bandwidth and Conversion Loss of a Semiconductor Heterodyne
Receiver with Phonon Cooling of Two-Dimensional Electrons
E. L. Shangina, K. V. Smirnov, D. V. Morozov, V. V. Kovalyuk, G. N. Goltsman,
A. A. Verevkin, and A. I. Toropov p. 1427 abstract
Low-Field Anomaly of the Hall Effect in Disordered Two-Dimensional Systems
A. V. Germanenko, G. M. Minkov, O. E. Rut, I. V. Soldatov, and A. A. Sherstobitov p. 1430 abstract
Inversionless Amplification in Semiconductor Nanostructures:
A Way to Create a Frequency-Tunable Laser of Far-Infrared and Terahertz Radiation
V. A. Kukushkin p.1435 abstract
In Situ Optical Diagnostics of Growing Surfaces
in the Process of Nanoheterostructure Fabrication
I. P. Kazakov, E. V. Glazyrin, S. A. Savinov, V. I. Tsekhosh, and S. S. Shmelev p. 1441 abstract
Control of Emission Wavelength for InGaAs/GaAs Quantum Wells
and Laser Structures on Their Basis by Means of Proton Irradiation
S. A. Akhlestina, V. K. Vasilev, O. V. Vikhrova, Yu. A. Danilov,
B. N. Zvonkov, and S. M. Nekorkin p. 1446 abstract
Formation and White Photoluminescence of Nanoclusters
in SiOx Films Implanted with Carbon Ions
A. I. Belov, A. N. Mikhaylov, D. E. Nikolitchev, A. V. Boryakov, A. P. Sidorin,
A. P. Gratchev, A. V. Ershov, and D. I. Tetelbaum p. 1450 abstract
Temperature Dependence of Inverse Population on Intracenter Transitions
of Shallow Impurity Centers in Semiconductors
E. E. Orlova p. 1457 abstract
Photoconductivity of InAs/GaAs Structures with InAs Nanoclusters
in the Near-Infrared Region
A. V. Antonov, N. V. Vostokov, M. N. Drozdov, L. D. Moldavskaya,
V. I. Shashkin, O. I. Khrykin, and A. N. Yablonskiy p. 1464 abstract
High-Resolution Emission Spectra of Pulsed Terahertz Quantum-Cascade Lasers
A. V. Ikonnikov, A. V. Antonov, A. A. Lastovkin, V. I. Gavrilenko,
Yu. G. Sadofev, and N. Samal p. 1467 abstract
Specific Features of the Mechanisms of Excitation
of Erbium Photoluminescence in Epitaxial Si:Er/Si Structures
A. N. Yablonskiy, B. A. Andreev, L. V. Krasilnikova, D. I. Kryzhkov,
V. P. Kuznetsov, and Z. F. Krasilnik p. 1472 abstract
Kinetics of Terahertz Photoconductivity in p-Ge under Impurity Breakdown Conditions
S. V. Morozov, K. V. Maremyanin, I. V. Erofeeva, A. N. Yablonskiy,
A. V. Antonov, L. V. Gavrilenko, V. V. Rumyantsev, and V. I. Gavrilenko p. 1476 abstract
Special Features of the Excitation Spectra and Kinetics
of Photoluminescence of the Si1xGex:Er/Si Structures with Relaxed Heterolayers
L. V. Krasilnikova, A. N. Yablonskiy, M. V. Stepikhova, Yu. N. Drozdov,
V. G. Shengurov, and Z. F. Krasilnik p. 1480 abstract
Electrical and Luminescence Properties
of Silicon-Based Tunnel Transit-Time Light-Emitting Diodes p+/n+/n-Si:Er
V. B. Shmagin, V. P. Kuznetsov, K. E. Kudryavtsev, S. V. Obolensky,
V. A. Kozlov, and Z. F. Krasilnik p. 1486 abstract
The Cyclotron Resonance of Holes in InGaAs/GaAs Heterostructures
with Quantum Wells in Quantizing Magnetic Fields
A. V. Ikonnikov, K. E. Spirin, V. I. Gavrilenko, D. V. Kozlov,
O. Drachenko, H. Schneider, and M. Helm p. 1492 abstract
Lateral Transport and Far-Infrared Radiation of Electrons
in InxGa1xAs/GaAs Heterostructures with the Double Tunnel-Coupled
Quantum Wells in a High Electric Field
N. V. Baidus, P. A. Belevskii, A. A. Biriukov, V. V. Vainberg, M. N. Vinoslavskii,
A. V. Ikonnikov, B. N. Zvonkov, A. S. Pylypchuk, and V. N. Poroshin p. 1495 abstract
Tunneling Electron Transport through Heterobarriers with Nanometer Heterogeneities
V. A. Kozlov and V. A. Verbus p.1499 abstract
Confocal Raman Microscopy of Self-Assembled GeSi/Si(001) Islands
A. I. Mashin, A. V. Nezhdanov, D. O. Filatov, M. A. Isakov, V. G. Shengurov,
V. Yu. Chalkov, and S. A. Denisov p. 1504 abstract
The Cyclotron Resonance in Heterostructures with the InSb/AlInSb Quantum Wells
Yu. B. Vasilyev, F. Gouider, G. Nachtwei, and P. D. Buckle p. 1511 abstract
Dynamic Electron Tunneling through the Quantum Dot
under Conditions of Coulomb Blockade
S. M. Kashin and A. M. Satanin p. 1515 abstract
Physics of Semiconductor Devices
Germanium Subcells for Multijunction GaInP/GaInAs/Ge
Solar Cells
N. A. Kalyuzhnyy, A. S. Gudovskikh, V. V. Evstropov, V. M. Lantratov,
S. A. Mintairov, N. Kh. Timoshina, M. Z. Shvarts, and V. M. Andreev p. 1520 abstract
Dynamic Current Localization during Turn-Off
of High-Power Microgate Bipolar Switches
A. V. Gorbatyuk, I. V. Grekhov, and D. V. Gusin p.1529 abstract
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