Contents
Semiconductors

Vol. 42, No. 10, 2008

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties
of Semiconductors

Parameters of Vacancies’ Formation in the Carbon-Subgroup Crystals

M. N. Magomedov p. 1133  abstract

Electronic and Optical Properties of Semiconductors

Effect of a Phase Transition on the Electron Energy Spectrum in Ag₂S

F. F. Aliev, M. B. Jafarov, B. A. Tairov, G. P. Pashaev, A. A. Saddinova, and A. A. Kuliev p. 1146  abstract

Autosolitons in Bistable System of Silicon with Deep Impurity Levels

A. M. Musaev p. 1149  abstract

Mössbauer U^– Centers as Tools for Studying the Bose Condensation in Semiconductors

G. A. Bordovski, S. A. Nemov, A. V. Marchenko, P. P. Seregin, and A. V. Zatseva p. 1153  abstract

Lorentz Number and Hall Factor in Degenerate Semiconductors during Resonance Scattering
of Charge Carriers

L. V. Prokof’eva, A. A. Shabaldin, V. A. Korchagin, S. A. Nemov, and Yu. I. Ravich p. 1161  abstract

Specific Features of the Generation–Recombination Properties of Bistable Defects
in Semiconductors: Manifestation in Hoffmann’s Function

A. G. Nikitina and V. V. Zuev p. 1171  abstract

Examination of Properties of Epitaxial and Bulk Gallium Antimonide

V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, O. A. Khvostikova, A. S. Vlasov,
E. P. Rakova, and V. M. Andreev p. 1179  abstract

Semiconductor Structures, Interfaces, and Surfaces

Consideration of Spontaneous Polarization in the Problem of NH-SiC/3C-SiC/NH-SiC
Heterostructures Formed by Cubic (3C) and Hexagonal (NH) Silicon Carbide Polytypes

S. Yu. Davydov and A. V. Troshin p. 1187  abstract

Low-Dimensional Systems

Exciton States and Photoluminescence of Silicon and Germanium Nanocrystals in an Al₂O₃ matrix

I. M. Kupchak, Yu. V. Kryuchenko, D. V. Korbutyak, A. V. Sachenko, É. B. Kaganovich,
É. G. Manolov, and É. V. Begun p. 1194  abstract

Effect of Potential Fluctuations on the Energy Structure of GaAs/AlGaAs Quantum Wells
with A⁺ Centers

P. V. Petrov, Yu. L. Ivánov, V. S. Mikhrin, and A. E. Zhukov p. 1200  abstract

Effect of Impurities on the Steady Component of the Current in a Quantum Wire
under the Joint Action of AC and DC Fields

D. V. Zav’yalov and S. V. Kryuchkov p. 1204  abstract

Ab Initio Calculations of Phonon Spectra of (GaP)_n(AlP)_m Superlattices

A. V. Kosobutski and E. N. Malysheva p. 1208  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Photophysical Properties of Silicon-Containing Poly[Salicylidene Azomethine]s

E. L. Alexandrova, A. G. Ivanov, N. M. Geller, L. B. Nadezhdina, and V. V. Shamanin p. 1214  abstract

Physics of Semiconductor Devices

Comparative Analysis of Limiting Photoconversion Efficiency of Usual Solar Cells
and Solar Cells with Quantum Wells

A. V. Sachenko and I. O. Sokolovski p. 1219  abstract

Effect of Excitation Level on the Optical Properties of GaAs/AlGaO Microdisks
with an Active Region Containing InAs Quantum Dots

A. M. Nadtochiy, S. A. Blokhin, A. V. Sakharov, M. M. Kulagina, Yu. M. Zadiranov,
N. Yu. Gordeev, M. V. Maksimov, V. M. Ustinov, N. N. Ledentsov, E. Stock, T. Warming,
and D. Bimberg p. 1228  abstract

Highly Sensitive Submillimeter InSb Photodetectors

Yu. B. Vasilyev, A. A. Usikova, N. D. Il’inskaya, P. V. Petrov, and Yu. L. Ivanov p. 1234  abstract

Properties of Waveguide Modes in a Photon Crystal Based on Slotted Silicon with a Defect

A. S. Spitsyn and G. F. Glinski p. 1237  abstract

Fabrication, Treatment, and Testing of Materials And Structures

Specific Features of the Effect of Irradiation with Electrons and Neutrons on Photoelectric
Properties of CdS Single Crystals Nominally Undoped and Doped with Cu

H. Ye. Davidyuk, V. V. Bozhko, and L. V. Bulatetska p. 1244  abstract

Catalytic Properties of Composite Amorphous Carbon–Platinum Layers in Fuel Cells

A. A. Nechitalov, T. K. Zvonareva, A. D. Remenyuk, V. A. Tolmachev, D. N. Goryachev,
O. S. El’tsina, L. V. Belyakov, and O. M. Sreseli p. 1249  abstract

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