Contents
Semiconductors

Vol. 41, No. 10, 2007

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic and Optical Properties of Semiconductors

Intensification of Electroluminescence of ZnSe:(Te, O) Crystals as a Result
of Irradiation with -Ray Photons

D. B. Él’murotova and É. M. Ibragimova p. 1135  abstract

Effect of Copper Doping on Kinetic Phenomena in n-Bi2Te2.85Se0.15

M. K. Zhitinskaya, S. A. Nemov, and T. E. Svechnikova p. 1140  abstract

Study of Photoluminescence Spectra of GaMnAs Produced
by Low-Temperature Molecular Beam Epitaxy

P. B. Parchinskiy, A. Yu. Bobylev, S. I. Vlasov, Fu Chen Yu, and Do Jin Kim p. 1145  abstract

Semiconductor Structures, Interfaces, and Surfaces

Characteristics of Tunneling and Impact Ionization
in ZnS:Mn-Based Thin-Film Electroluminescent Structures

N. T. Gurin, O. Yu. Sabitov, and A. M. Afanas’ev p. 1150  abstract

Effect of Slow Electrons on the Field Dependences
of the Hall Coefficient for CdxHg1–xTe Alloys at T = 77 K

A. G. Belov, I. M. Belova, V. E. Kanevskii, M. S. Sviridov, and A. A. Shlenskiframe0 p. 1160  abstract

Conduction Mechanisms in Silicon–Polymer–Metal Heterostructures

R. B. Salikhov, A. N. Lachinov, and R. G. Rakhmeev p. 1165  abstract

Fabrication and Properties of Point Structures Formed on n-InSe Single Crystals

G. A. Il’chuk, V. V. Kus’nézh, R. Yu. Petrus’, V. Yu. Rud’, Yu. V. Rud’, and V. O. Ukrainets p. 1170  abstract

Photosensitivity of the Structures on the Cu(In,Ga)(S,Se)2 Films Obtained
by Thermal Treatment in the S and Se Vapors

V. Yu. Rud’, M. S. Tivanov, Yu. V. Rud’, V. F. Gremenok, E. P. Zaretskaya,
V. B. Zalesskiframe1, T. R. Leonova, and P. I. Romanov p. 1173  abstract

Specific Features in the Energy Spectrum
of the Narrow-Gap Semiconductor Bicrystals Bi1–xSbx (0.06 < equal x < equal 0.20)

A. E. Georgitsé, V. I. Ivanov-Omskiframe2, F. M. Muntyanu, M. I. Karaman, and I. T. Postolaki p. 1178  abstract

Determination of the Characteristic Length of Thickness Fluctuations
for a Tunneling-Thin Insulator in MIS Structures from Electrical Data

S. É. Tyaginov, M. I. Vexler, I. V. Grekhov, and V. Zaporojtchenko p. 1181  abstract

Effect of Energy Band Bending on Non-Steady-State Dember EMF in Bipolar Semiconductors

A. Konin p. 1185  abstract

Anomalous Dependences of the Diode Barrier Capacitance on Bias Voltage and Temperature

V. I. Murygin, A. U. Fattakhdinov, D. A. Loktev, and V. B. Gundyrev p. 1189  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Experimental Investigation of Effect of Aromatic Hydrocarbons on Resistivity of Indium Selenide

S. I. Drapak and Z. D. Kovalyuk p. 1197  abstract

Relaxation of Photodielectric Effect in Pb3O4 Layers

V. T. Avanesyan and E. P. Baranova p. 1201  abstract

Optical Properties of Organic Semiconductors Based on Erbium Phthalocyanine Complexes
in the Mid- and Near-Infrared Spectral Regions

I. A. Belogorokhov, E. V. Tikhonov, M. O. Breusova, V. E. Pushkarev,
L. G. Tomilova, and D. R. Khokhlov p. 1204  abstract

Physics of Semiconductor Devices

A Multifrequency Interband Two-Cascade Laser

A. A. Biryukov, B. N. Zvonkov, S. M. Nekorkin, P. B. Demina, N. N. Semenov,
V. Ya. Aleshkin, V. I. Gavrilenko, A. A. Dubinov, K. V. Marem’yanin, S. V. Morozov,
A. A. Belyanin, V. V. Kocharovsky, and Vl. V. Kocharovsky p. 1209  abstract

Comparative Analysis of Photoconversion Efficiency in the Si Solar Cells
under Concentrated Illumination for the Standard
and Rear Geometries of Arrangement of Contacts

A. V. Sachenko, A. P. Gorban, V. P. Kostylyov, A. A. Serba, and I. O. Sokolovskyi p. 1214  abstract

The Use of Spatially Ordered Arrays of Etched Holes for Fabrication
of Single-Mode Vertical-Cavity Surface-Emitting Lasers Based
on Submonolayer InGaAs Quantum Dots

A. G. Kuzmenkov, S. A. Blokhin, N. A. Maleev, A. V. Sakharov, V. G. Tikhomirov,
M. V. Maksimov, V. M. Ustinov, A. R. Kovsh, S. S. Mikhrin, N. N. Ledentsov,
H. P. D. Yang, G. Lin, R. S. Hsiao, and J. Y. Chi p. 1224  abstract

Double-Band Generation in Quantum-Well Semiconductor Laser at High Injection Levels

D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, A. Yu. Leshko, A. V. Lyutetskiframe3, T. A. Nalet,
D. N. Nikolaev, N. A. Pikhtin, N. A. Rudova, S. O. Slipchenko, Z. N. Sokolova,
A. L. Stankevich, N. V. Fetisova, M. A. Khomylev, V. V. Shamakhov, K. S. Borshchev,
I. N. Arsent’ev, A. D. Bondarev, M. K. Trukan, and I. S. Tarasov p. 1230  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Plastic Relaxation of GeSi/Si(001) Films Grown by Molecular-Beam Epitaxy
in the Presence of the Sb Surfactant

Yu. B. Bolkhovityanov, A. S. Deryabin, A. K. Gutakovskiframe4, A. V. Kolesnikov, and L. V. Sokolov p. 1234  abstract

Nucleation at the Lateral Surface and the Shape of Whisker Nanocrystals

V. G. Dubrovskiframe5, N. V. Sibirev, G. É. Cirlin, V. M. Ustinov, and J. C. Harmand p. 1240  abstract

Effect of Chemical Treatment on Photoluminescence Spectra
of SiOx Layers with Built-in Si Nanocrystals

I. Z. Indutnyy, I. Yu. Maframe6danchuk, V. I. Min’ko, P. E. Shepelyavyframe7, and V. A. Dan’ko p. 1248  abstract

Defects of the Structure of Semiconductor Superlattices Grown on the Basis of II–VI Alloys

G. F. Kuznetsov p. 1255  abstract

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