Contents
Semiconductors

Vol. 39, No. 10, 2005

Simultaneous English language translation of the journal is available from Pleiades Publishing, Inc.
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Thermodynamic Stability of Bulk and Epitaxial CdHgTe, ZnHgTe, and MnHgTe Alloys

V. G. Debuk, S. G. Dremlyuzhenko, and S. É. Ostapov p. 1111  abstract

Electronic and Optical Properties of Semiconductors

Low-Temperature Microwave Magnetoresistance of Lightly Doped p-Ge and p-Ge_1–xSi_x

A. I. Venger, A. G. Zabrodski, and T. V. Tisnek p. 1117  abstract

Features of Physical Differentiation with Respect to Light Absorbance
in Junction Photovoltage Spectra

L. I. Berezhinski, E. F. Venger, I. E. Matyash, A. V. Sachenko, and B. K. Serdega p. 1122  abstract

Mechanism of Radiative Recombination in the Region of Interband Transitions
in Si–Ge Solid Solutions

A. M. Emel’yanov, N. A. Sobolev, T. M. Mel’nikova, and N. V. Abrosimov p. 1128  abstract

Magnetism of III–V Crystals Doped with Rare-Earth Elements

N. T. Bagraev and V. V. Romanov p. 1131  abstract

Semiconductor Structures, Interfaces, and Surfaces

Study of Certain Properties of Si–Si_1–xGe_x (0 x 1) Structures Grown from
a Restricted Tin-Based Solution–Melt by Liquid-Phase Epitaxy

B. Sapaev and A. S. Saidov p. 1141  abstract

Formation of Potential Barriers in Undoped Disordered Semiconductors

N. V. Vishnyakov, S. P. Vikhrov, V. G. Mishustin, A. P. Avachev,
I. G. Utochkin, and A. A. Popov p. 1147  abstract

Stabilization of Charge at the Interface Between the Buried Insulator
and Silicon in Silicon-on-Insulator Structures

I. V. Antonova p. 1153  abstract

Low-Dimensional Systems

Radiative Recombination in GaN Nanocrystals at High Intensities of Optical Excitation

A. N. Gruzintsev, A. N. Red’kin, and C. Barthou p. 1158  abstract

Spin Splitting of the X-valley Donor Impurity States in AlAs Barriers
and the Spatial Distribution of the Probability Density of Their Wave Functions

E. E. Vdovin and Yu. N. Khanin p. 1162  abstract

Effect of Quantum Confinement on Optical Properties of Ge Nanocrystals in GeO₂ Films

E. B. Gorokhov, V. A. Volodin, D. V. Marin, D. A. Orekhov, A. G. Cherkov,
A. K. Gutakovski, V. A. Shvets, A. G. Borisov, and M. D. Efremov p. 1168  abstract

Electronic Structure and Spectral Properties of Si₄₆ and Na₈Si₄₆ Clathrates

S. I. Kurganski, N. A. Borshch, and N. S. Pereslavtseva p. 1176  abstract

Terahertz Electroluminescence Originating from Spatially Indirect Intersubband Transitions
in a GaAs/AlGaAs Quantum-Cascade Structure

G. F. Glinski, A. V. Andrianov, O. M. Sreseli, and N. N. Zinov’ev p. 1182  abstract

Nonequilibrium Room-Temperature Carrier Distribution in InAs Quantum Dots Overgrown
with Thin AlAs/InAlAs Layers

N. V. Kryzhanovskaya, A. G. Gladyshev, S. A. Blokhin, M. V. Maksimov, E. S. Semenova,
A. P. Vasil’ev, A. E. Zhukov, N. N. Ledentsov, V. M. Ustinov, and D. Bimberg p. 1188  abstract

Study of the Properties of a Two-Dimensional Electron Gas
in p^–-3C-SiC/n⁺-6H-SiC Heterostructures at Low Temperatures

A. A. Lebedev, D. K. Nel’son, B. S. Razbirin, I. I. Sadashev,
A. N. Kuznetsov, and A. E. Cherenkov p. 1194  abstract

Amorphous, Vitreous, and Porous Semiconductors

Kinetics of Structural and Phase Transformations in Thin SiO_x Films in the Course
of a Rapid Thermal Annealing

V. A. Dan’ko, I. Z. Indutny, V. S. Lysenko, I. Yu. Madanchuk, V. I. Min’ko,
A. N. Nazarov, A. S. Tkachenko, and P. E. Shepelyavy p. 1197  abstract

Physics of Semiconductor Devices

A Quasi-hydrodynamic Modification of the Uniform-Channel Approximation
in MOS-Transistor Theory

V. A. Gergel’ and M. N. Yakupov p. 1204  abstract

Temperature Dependence of the Threshold Current of QW Lasers

N. L. Bazhenov, K. D. Mynbaev, V. I. Ivanov-Omski, V. A. Smirnov, V. P. Evtikhiev, N. A. Pikhtin,
M. G. Rastegaeva, A. L. Stankevich, I. S. Tarasov, A. S. Shkol’nik, and G. G. Zegrya p. 1210  abstract

Mid- and Far-IR Focal Plane Arrays Based on Hg_1–xCd_xTe Photodiodes

V. I. Stafeev, K. O. Boltar’, I. D. Burlakov, V. M. Akimov, E. A. Klimanov, L. D. Saginov,
V. N. Solyakov, N. G. Mansvetov, V. P. Ponomarenko, A. A. Timofeev, and A. M. Filachev p. 1215  abstract

Structural Mechanisms of Optimization of the Photoelectric Properties
of CdS/CdTe Thin-Film Heterostructures

G. S. Khrypunov p. 1224  abstract

Electroluminescent Properties of Strained p-Si LEDs

N. A. Sobolev, A. M. Emel’yanov, E. I. Shek, O. V. Feklisova, and E. B. Yakimov p. 1229  abstract

Errata

Erratum: “Interpretation of the Visible Photoluminescence of Inequisized Silicon
Nanoparticles Suspended in Ethanol” [Semiconductors 39, 884 (2005)]

V. E. Ogluzdin p. 1233

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