Contents
Semiconductors
Vol. 37, No. 10, 2003
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.
Review
Modification of Hg1xCdxTe Properties by Low-Energy Ions
K. D. Mynbaev and V. I. Ivanov-Omskip. 1127 abstract
Atomic Structure and Nonelectronic Properties of Semiconductors
Thermodynamic Stability of GaInSb, InAsSb, and GaInP Epitaxial Films
V. G. Debuk p. 1151 abstract
Electronic and Optical Properties of Semiconductors
Kinetics of Ambipolar Diffusion and Drift Currents of Nonequilibrium Carriers in Semiconductors
A. A. Abdullaev, A. R. Aliev, and I. K. Kamilov p. 1156 abstract
A Study of Linear Dichroism Induced by Uniaxial Strain in Silicon Crystals
E. F. Venger, I. E. Matyash, and B. K. Serdega p. 1160 abstract
Photoluminescence from Amorphous Carbon Grown by Laser Ablation of Graphite
S. G. Yastrebov, V. I. Ivanov-Omski, and A. Richter p. 1165 abstract
Semiconductors Structures, Interfaces, and Surfaces
Photodeposition of Silver at the Interface of a Heterojunction Based on a Solid Electrolyte:
The Case of CdSeAs2S3:Agx (x = 0.92.4) Heterojunctions
A. I. Stetsun p. 1169 abstract
Formation of a Native-Oxide Structure on the Surface of n-GaAs under Natural Oxidation in Air
N. A. Torkhov p. 1177 abstract
Electroluminescence in a Semimetal Channel at a Single Type II Broken-Gap Heterointerface
K. D. Moiseev, M. P. Mikhalova, Yu. P. Yakovlev, I. Oswald, E. Hulicius,
J. Pangrac, and T.ime
ek p. 1185 abstract
Low-Dimensional Systems
Resonance Raman Scattering in Ge Nanoislands Grown on a Si(111) Substrate Coated
with an Ultrathin SiO2 Layer
V. A. Volodin, M. D. Efremov, A. I. Nikiforov, D. A. Orekhov,
O. P. Pchelyakov, and V. V. Ulyanov p. 1190 abstract
Electronic Absorption of Surface Acoustic Waves by Quantum Rings in a Magnetic Field
V. M. Kovalev and A. V. Chaplik p. 1195 abstract
Characteristics of Multiple-Island Single-Electron Chains in Relation to Various Factors
I. I. Abramov, S. A. Ignatenko, and E. G. Novik p. 1201 abstract
The X+ Trion in a System with Spatial Separation of the Charge Carriers
R. A. Sergeev and R. A. Suris p. 1205 abstract
Amorphous, Vitreous, and Porous Semiconductors
Spectral Ellipsometry of Amorphous Hydrogenated Carbon Grown
by Magnetron Sputtering of Graphite
S. G. Yastrebov, M. Garriga, M. I. Alonso, and V. I. Ivanov-Omskip. 1211 abstract
Transient Photocurrent and Photoluminescence in Porous Silicon
N. S. Averkiev, L. P. Kazakova, Yu. P. Piryatinski, and N. N. Smirnova p. 1214 abstract
Physics of Semiconductor Devices
Electron Transport in Unipolar Heterostructure Transistors with Quantum Dots
in Strong Electric Fields
V. G. Mokerov, Yu. K. Pozela, and Yu. V. Fedorov p. 1217 abstract
Silicon-on-Insulator Nanotransistors: Prospects and Problems of Fabrication
O. V. Naumova, I. V. Antonova, V. P. Popov, Yu. V. Nastaushev, T. A. Gavrilova,
L. V. Litvin, and A. L. Aseev p. 1222 abstract
Effect of Irradiation with Fast Neutrons on Electrical Characteristics of Devices Based
on CVD 4H-SiC Epitaxial Layers
E. V. Kalinina, G. F. Kholuyanov, D. V. Davydov, A. M. Strelchuk, A. Hallén,
A. O. Konstantinov, V. V. Luchinin, and A. Yu. Nikiforov p. 1229 abstract
Design and Technology of Vertical-Cavity Surface-Emitting Lasers
with Nonconducting Epitaxial Mirrors
N. A. Maleev, A. P. Kovsh, A. E. Zhukov, A. P. Vasilev, S. S. Mikhrin, A. G. Kuzmenkov,
D. A. Bedarev, Yu. M. Zadiranov, M. M. Kulagina, Yu. M. Shernyakov, A. S. Shulenkov,
V. A. Bykovski, Yu. M. Solovev, C. Möller, N. N. Ledentsov, and V. M. Ustinov p. 1234 abstract
Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers
with the Emission Wavelength from 1.25 to 1.29 m
I. I. Novikov, M. V. Maksimov, Yu. M. Shernyakov, N. Yu. Gordeev, A. R. Kovsh,
A. E. Zhukov, S. S. Mikhrin, N. A. Maleev, A. P. Vasilev, V. M. Ustinov, Zh. I. Alferov,
N. N. Ledentsov, and D. Bimberg p. 1239 abstract
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