Contents
Semiconductors

Vol. 37, No. 10, 2003

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Review

Modification of Hg_1–xCd_xTe Properties by Low-Energy Ions

K. D. Mynbaev and V. I. Ivanov-Omski p. 1127  abstract

Atomic Structure and Nonelectronic Properties of Semiconductors

Thermodynamic Stability of GaInSb, InAsSb, and GaInP Epitaxial Films

V. G. Debuk p. 1151  abstract

Electronic and Optical Properties of Semiconductors

Kinetics of Ambipolar Diffusion and Drift Currents of Nonequilibrium Carriers in Semiconductors

A. A. Abdullaev, A. R. Aliev, and I. K. Kamilov p. 1156  abstract

A Study of Linear Dichroism Induced by Uniaxial Strain in Silicon Crystals

E. F. Venger, I. E. Matyash, and B. K. Serdega p. 1160  abstract

Photoluminescence from Amorphous Carbon Grown by Laser Ablation of Graphite

S. G. Yastrebov, V. I. Ivanov-Omski, and A. Richter p. 1165  abstract

Semiconductors Structures, Interfaces, and Surfaces

Photodeposition of Silver at the Interface of a Heterojunction Based on a Solid Electrolyte:
The Case of CdSe–As₂S₃:Ag_x (x = 0.9–2.4) Heterojunctions

A. I. Stetsun p. 1169  abstract

Formation of a Native-Oxide Structure on the Surface of n-GaAs under Natural Oxidation in Air

N. A. Torkhov p. 1177  abstract

Electroluminescence in a Semimetal Channel at a Single Type II Broken-Gap Heterointerface

K. D. Moiseev, M. P. Mikhalova, Yu. P. Yakovlev, I. Oswald, E. Hulicius,
J. Pangrac, and T. imeek p. 1185  abstract

Low-Dimensional Systems

Resonance Raman Scattering in Ge Nanoislands Grown on a Si(111) Substrate Coated
with an Ultrathin SiO₂ Layer

V. A. Volodin, M. D. Efremov, A. I. Nikiforov, D. A. Orekhov,
O. P. Pchelyakov, and V. V. Ul’yanov p. 1190  abstract

Electronic Absorption of Surface Acoustic Waves by Quantum Rings in a Magnetic Field

V. M. Kovalev and A. V. Chaplik p. 1195  abstract

Characteristics of Multiple-Island Single-Electron Chains in Relation to Various Factors

I. I. Abramov, S. A. Ignatenko, and E. G. Novik p. 1201  abstract

The X⁺ Trion in a System with Spatial Separation of the Charge Carriers

R. A. Sergeev and R. A. Suris p. 1205  abstract

Amorphous, Vitreous, and Porous Semiconductors

Spectral Ellipsometry of Amorphous Hydrogenated Carbon Grown
by Magnetron Sputtering of Graphite

S. G. Yastrebov, M. Garriga, M. I. Alonso, and V. I. Ivanov-Omski p. 1211  abstract

Transient Photocurrent and Photoluminescence in Porous Silicon

N. S. Averkiev, L. P. Kazakova, Yu. P. Piryatinski, and N. N. Smirnova p. 1214  abstract

Physics of Semiconductor Devices

Electron Transport in Unipolar Heterostructure Transistors with Quantum Dots
in Strong Electric Fields

V. G. Mokerov, Yu. K. Pozela, and Yu. V. Fedorov p. 1217  abstract

Silicon-on-Insulator Nanotransistors: Prospects and Problems of Fabrication

O. V. Naumova, I. V. Antonova, V. P. Popov, Yu. V. Nastaushev, T. A. Gavrilova,
L. V. Litvin, and A. L. Aseev p. 1222  abstract

Effect of Irradiation with Fast Neutrons on Electrical Characteristics of Devices Based
on CVD 4H-SiC Epitaxial Layers

E. V. Kalinina, G. F. Kholuyanov, D. V. Davydov, A. M. Strel’chuk, A. Hallén,
A. O. Konstantinov, V. V. Luchinin, and A. Yu. Nikiforov p. 1229  abstract

Design and Technology of Vertical-Cavity Surface-Emitting Lasers
with Nonconducting Epitaxial Mirrors

N. A. Maleev, A. P. Kovsh, A. E. Zhukov, A. P. Vasil’ev, S. S. Mikhrin, A. G. Kuz’menkov,
D. A. Bedarev, Yu. M. Zadiranov, M. M. Kulagina, Yu. M. Shernyakov, A. S. Shulenkov,
V. A. Bykovski, Yu. M. Solov’ev, C. Möller, N. N. Ledentsov, and V. M. Ustinov p. 1234  abstract

Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers
with the Emission Wavelength from 1.25 to 1.29 m

I. I. Novikov, M. V. Maksimov, Yu. M. Shernyakov, N. Yu. Gordeev, A. R. Kovsh,
A. E. Zhukov, S. S. Mikhrin, N. A. Maleev, A. P. Vasil’ev, V. M. Ustinov, Zh. I. Alferov,
N. N. Ledentsov, and D. Bimberg p. 1239  abstract

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