Contents
Semiconductors

Vol. 36, No. 10, 2002

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Thermodynamic Stability of Bulk and Epitaxial Ge_1–xSn_x Semiconductor Alloys

V. G. Debuk and Yu. G. Korolyuk p. 1073  abstract

The Effect of the Concentration of the Majority Charge Carriers
and Irradiation Intensity on the Efficiency of Radiation-Defect Production in n-Si Crystals

T. A. Pagava and Z. V. Basheleshvili p. 1077  abstract

Dependence of the Annealing Kinetics of A Centers and Divacancies
on Temperature, Particle Energy, and Irradiation Dose for n-Si Crystals

T. A. Pagava p. 1079  abstract

Chalcogen Dimers in Silicon

A. A Taskin p. 1083  abstract

Chemical Bonding and Elastic Constants of Certain Ternary III–V Solid Solutions

V. G. Debuk and Ya. I. Viklyuk p. 1091  abstract

The Nucleation of Coherent Semiconductor Islands
during the Stranski–Krastanov Growth Induced by Elastic Strains

S. A. Kukushkin, A. V. Osipov, F. Schmitt, and P. Hess p. 1097  abstract

Investigation of Vacancy-Type Complexes in GaN and AlN using Positron Annihilation

N. Yu. Arutyunov, A. V. Mikhailin, V. Yu. Davydov,
V. V. Emtsev, G. A. Oganesyan, and E. E. Haller p. 1106  abstract

The Influence of Shallow Impurities on the Temperature Dependence
of Microhardness and the Photomechanical Effect in Semiconductors

A. B. Gerasimov and G. D. Chiradze p. 1111  abstract

Electronic and Optical Properties of Semiconductors

Neutron-Irradiation-Induced Effects Caused by the Divacancy Clusters
with the Tetravacancy Core in the a Float-Zone Silicon

P. F. Ermolov, D. E. Karmanov, A. K. Leflat,
V. M. Manankov, M. M. Merkin, and E. K. Shabalina p. 1114  abstract

Electronic Properties of Liquid Tl₂Te, Tl₂Se, Ag₂Te, Cu₂Te, and Cu₂Se Alloys

V. M. Sklyarchuk and Yu. O. Plevachuk p. 1123  abstract

Dependence of GaN Photoluminescence on the Excitation Intensity

V. N. Bessolov, V. V. Evstropov, V. E. Kompan, and M. V. Mesh p. 1128  abstract

Semiconductor Structures, Interfaces, and Surfaces

Photosensitivity of Structures Based on I–III_n–VI_m Ternary Compounds
Containing Ordered Vacancies

I. V. Bodnar’, V. Yu. Rud’, Yu. V. Rud’, and M. V. Yakushev p. 1132  abstract

Effect of the State of the Silicon Surface on Hydrogen Sensitivity of Pd/n-Si Barrier Structures

V. M. Kalygina, L. S. Khludkova, V. I. Balyuba, and T. A. Davydova p. 1136  abstract

Electrical Properties of Narrow-Gap HgMnTe Schottky Diodes

L. A. Kosyachenko, A. V. Markov, S. É. Ostapov,
I. M. Rarenko, V. M. Sklyarchuk, and Ye. F. Sklyarchuk p. 1138  abstract

Low-Dimensional Systems

Anisotropy of Magnetooptical Absorption of Quantum Dot–Impurity Center Complexes

V. D. Krevchik, A. B. Grunin, and R. V. Zatsev p. 1146  abstract

Dependence of the Optical Gap of Si Quantum Dots on the Dot Size

V. A. Burdov p. 1154  abstract

Dependence of Scattering of Quasi-Two-Dimensional Electrons
by Acoustic Phonons on the Parameters of a GaAs/Al_xGa_1–xAs Superlattice

S. I. Borisenko p. 1159  abstract

Temperature Dependence of Conductance of Electrostatically
Disordered Quasi-2D Semiconductor Systems Near an Insulator–Metal Percolation Transition

A. B. Davydov, B. A. Aronzon, D. A. Bakaushin, and A. S. Vedeneev p. 1163  abstract

Amorphous, Vitreous, and Porous Semiconductors

Photoluminescence and Recombination Luminescence
in Amorphous Molecular Semiconductors Doped with Organic Dyes

N. A. Davidenko, S. L. Studzinski, N. A. Derevyanko,
A. A. Ishchenko, Yu. A. Skryshevski, and A. J. Al-Kahdymi p. 1169  abstract

Crystallization of Amorphous Hydrogenated Silicon Films Deposited under Various Conditions

O. A. Golikova^†, E. V. Bogdanova, and U. S. Babakhodzhaev p. 1180  abstract

Electroluminescence from Porous Silicon in the Cathodic Reduction
of Persulfate Ions: Degree of Reversibility of the Tuning Effect

A. A. Saren, S. N. Kuznetsov, V. B. Pikulev,
Yu. E. Gardin, and V. A. Gurtov p. 1184  abstract

Space Charge Limited Current in Porous Silicon and Anatase (TiO₂)

É. A. Lebedev and T. Dittrich p. 1188  abstract

Physics of Semiconductor Devices

Influence of the Design and Material Parameters on the Current–Voltage Characteristics
of Two-Island Single-Electron Chains

I. I. Abramov, S. A. Ignatenko, and E. G. Novik p. 1192  abstract

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