Vol. 60, No. 10, 2026

Semiconductors

Dielectric Properties of Tl-Doped GaSe Single Crystals: Frequency Dispersion and Relaxation Processes

S. M. Asadov, S. N. Mustafaeva, and S. Y. Aliyeva p. 1021 abstract

Effect of Polarity on the Electrical Properties and Low-Frequency Noise Characteristics of LEDs Grown on Sapphire Substrates

Danghui Wang, Keliang Liu, Xi Zhao, and Shu Zhao p. 1029 abstract

Investigation of Structural, Elastic, Thermodynamic Properties and Phonon Dispersion of Heusler Alloys XYSb (X = Li₂ and Ru, Y = Na and Ta) Using First Principles Calculations

J. O. Akinlami, K. D. Ajayi, P. O. Adebambo, and M. O. Omeike p. 1037 abstract

Comparative Performance Analysis of Multi-Barrier GaN HEMTs with β-Ga₂O₃ Buffer and InGaN Back-Barrier Layers

P. Muthu Subramanian, T. Subhashini, M. Jayasheela, and P. Bujjibabu p. 1048 abstract

Effect of Pressure on Structural and Elastic Properties of Noncentrosymmetric LaPtGe₃ Studied by ab-initio Method

Nilufer Yesmin Tanisa, Md. Karimul Islam, Mosfiqur Rahman, Jahid Hossain Bhuiyan, and Ishrat Jahan p. 1064 abstract

Effect of Doping of Trimetallic Nanospheres on Optical Properties and Field Distribution in P3HT : PCBM Organic Solar Cells

Baseerat Khan and Hakeem Najeeb-ud-din p. 1076 abstract

High-Sensitivity Ammonia Gas Sensor Based on Dual-Material Dopingless GAA Nanowire FETs

Neha Patel, Ashish Raman, Sarabdeep Singh, and Prabhat Singh p. 1086 abstract

AlN Spacer-Induced Improvement in DC, RF, and Breakdown Characteristics of AlN Buffered AlGaN/GaN HEMTs

Ellapu Bhanu Prakash and Sushanta Bordoloi p. 1094 abstract

Integrated Thermal Noise Analysis of Ferroelectric-Doped Dual-Metal-Gate GaN HEMTs for High-Frequency Low-Noise Systems

V. Karutharaja, N. B. Balamurugan, M. Hemalatha, and M. Suguna p. 1109 abstract

Contents

Semiconductors