Vol. 55, No. 10, 2021
Formation of an Oxide Surface Layer and Its Influence on the Growth of Epitaxial Silicon Nanowires
p. 771 abstract
Modeling the Response of a Microwave Low-Barrier Uncooled Mott Diode to the Action of Heavy Ions of Outer Space and Femtosecond Laser Pulses
p. 780 abstract
Generation of Terahertz Radiation in InP:Fe Crystals Due to Second-Order Lattice Nonlinearity
p. 785 abstract
Missing Understanding of the Phase Factor between Valence-Electron and Hole Operators
p. 790 abstract
Specific Features of Structural Stresses in InGaN/GaN Nanowires
p. 795 abstract
Intervalley Relaxation Processes of Shallow Donor States in Germanium
p. 799 abstract
Terahertz Stimulated Emission under the Optical Resonant Excitation of Germanium Doped with Shallow Donors
p. 804 abstract
Atomic Structure and Optical Properties of CaSi2 Layers Grown on CaF2/Si Substrates
p. 808 abstract
Initial Stages of Growth of Semipolar AlN on a Nanopatterned Si(100) Substrate
p. 812 abstract
Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers
p. 816 abstract