Vol. 54, No. 10, 2020

Semiconductors

Electronic Properties of Semiconductors

Effect of a Nickel Impurity on the Galvanomagnetic Properties and Electronic Structure of PbTe

E. P. Skipetrov, B. B. Kovalev, I. V. Shevchenko, A. V. Knotko and V. E. Slynko p. 1171 abstract

Features of the Electrical-Conductivity Mechanism in γ-Irradiated TlInSe₂ Single Crystals under Hydrostatic Pressure

R. S. Madatov, Sh. G. Gasimov, S. S. Babayev, A. S. Alekperov, I. M. Movsumova and S. H. Jabarov p. 1180 abstract

Elastic and Thermal Properties of Orthorhombic and Tetragonal Phases of Cu₂ZnSiSe₄ by First Principles Calculations

Yan Li Gao, Wen Shui Guan and Yu Jing Dong p. 1185 abstract

Surfaces, Interfaces, and Thin Films

Structure and Photoelectric Properties of PbSe Films Deposited in the Presence of Ascorbic Acid

L. N. Maskaeva, V. M. Yurk, V. F. Markov, M. V. Kuznetsov, V. I. Voronin and O. A. Lipina p. 1191 abstract

Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy

O. S. Komkov, S. A. Khakhulin, D. D. Firsov, P. S. Avdienko, I. V. Sedova and S. V. Sorokin p. 1198 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Electron-Population Bragg Grating Induced in an Al_xGa_{1 –} _xAs–GaAs–Al_xGa_{1 –} _xAs Heterostructure by Intrinsic Stimulated Picosecond Emission

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev and A. N. Krivonosov p. 1205 abstract

Dispersive Transport of Hydrogen in MOS Structures after Exposure to Ionizing Radiation

O. V. Aleksandrov p. 1215 abstract

Growth of ZnO Nanostructures by Wet Oxidation of Zn Thin Film Deposited on Heat-Resistant Flexible Substrates at Low Temperature

O. F. Farhat, M. Hisham, M. Bououdina, Ammar A. Oglat and Nyan J. Mohammed p. 1220 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Effect of Ultraviolet Radiation and Electric Field on the Conductivity of Structures Based on α- and ε-Ga₂O₃

V. M. Kalygina, V. I. Nikolaev, A. V. Almaev, A. V. Tsymbalov, V. V. Kopyev, Y. S. Petrova, I. A. Pechnikov and P. N. Butenko p. 1224 abstract

Structure, Optical, and Photoelectric Properties of Lead-Sulfide Films Doped with Strontium and Barium

L. N. Maskaeva, E. V. Mostovshchikova, V. I. Voronin, E. E. Lekomtseva, P. S. Bogatova and V. F. Markov p. 1230 abstract

Structure and Optical Properties of Chalcogenide Glassy As–Ge–Te Semiconductor

A. I. Isayev, H. I. Mammadova, S. I. Mekhtiyeva and R. I. Alekberov p. 1241 abstract

Spontaneous and Stimulated Emission in Thin Films of Cu(In_{1 –} _xGa_x)(S_ySe_{1 –} _y)₂ Solid Solutions in the Сomposition of Solar Cells

I. E. Svitsiankou, V. N. Pavlovskii, E. V. Muravitskaya, E. V. Lutsenko, G. P. Yablonskii, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudry, M. V. Yakushev and S. O. Kognovitckii p. 1247 abstract

Physics of Semiconductor Devices

External Quantum Efficiency of Bifacial HIT Solar Cells

A. V. Ermachikhin, Yu. V. Vorobyov, A. D. Maslov, E. P. Trusov and V. G. Litvinov p. 1254 abstract

Capacitance Spectroscopy of Heteroepitaxial AlGaAs/GaAs p–i–n Structures

M. M. Sobolev and F. Y. Soldatenkov p. 1260 abstract

Comparative Analysis of the Optical and Physical Properties of InAs and In_0.8Ga_0.2As Quantum Dots and Solar Cells Based on them

R. A. Salii, S. A. Mintairov, A. M. Nadtochiy, V. N. Nevedomskii, M. Z. Shvarts and N. A. Kalyuzhnyy p. 1267 abstract

1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy

S. A. Blokhin, S. N. Nevedomsky, M. A. Bobrov, N. A. Maleev, A. A. Blokhin, A. G. Kuzmenkov, A. P. Vasyl’ev, S. S. Rohas, A. V. Babichev, A. G. Gladyshev, I. I. Novikov, L. Ya. Karachinsky, D. V. Denisov, K. O. Voropaev, A. S. Ionov, A. Yu. Egorov and V. M. Ustinov p. 1276 abstract

Analysis of the Temperature Dependence of Diode Ideality Factor in InGaN-Based UV-A Light-Emitting Diode

P. Dalapati, N. B. Manik and A. N. Basu p. 1284 abstract

Investigation of the Electrical Properties of Double-Gate Dual-Active-Layer (DG-DAL) Thin-Film Transistor (TFT) with HfO₂|La₂O₃|HfO₂ (HLH) Sandwich Gate Dielectrics

L. Ramesh, S. Moparthi, P. K. Tiwari, V. R. Samoju and G. K. Saramekala p. 1290 abstract

Characterization of Deep Levels in AlGaN|GaN HEMT by FT-DLTS and Current DLTS

M. Gassoumi p. 1296 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Physicochemical Interactions in the GeSb₂Te₄–PbSb₂Te₄ System

G. R. Gurbanov and M. B. Adygezalova p. 1304 abstract

Combination of Reactive-Ion Etching and Chemical Etching as a Method for Optimizing the Surface Relief on AlGaInN Heterostructures

L. K. Markov, I. P. Smirnova, M. V. Kukushkin and A. S. Pavluchenko p. 1310 abstract

Electrical and Photoelectric Properties of α-Si/SiO₂ and α-Ge/SiO₂ Multilayer Nanostructures on p-Si Substrates Annealed at Various Temperatures

O. M. Sreseli, M. A. Elistratova, D. N. Goryachev, E. V. Beregulin, V. N. Nevedomskii, N. A. Bert and A. V. Ershov p. 1315 abstract

XXIV International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–13, 2020

Crystalline-Phase Switching in Heterostructured Ga(As,P) Nanowires under the Impact of Elastic Strains

N. V. Sibirev, Yu. S. Berdnikov and V. N. Sibirev p. 1320 abstract

Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties

A. E. Klimov, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, D. V. Gorshkov, D. V. Ishchenko, E. V. Matyushenko, I. G. Neizvestny, G. Yu. Sidorov, S. P. Suprun, A. S. Tarasov, O. E. Tereshchenko and V.S. Epov p. 1325 abstract

Growth of a Ge Layer on a Si/SiO₂/Si(100) Structure by the Hot Wire Chemical Vapor Deposition

A. A. Sushkov, D. A. Pavlov, S. A. Denisov, V. Yu. Chalkov, R. N. Kryukov and E. A. Pitirimova p. 1332 abstract

Behavior of Lithium Donors in Bulk Single-Crystal Isotopically Pure ²⁸Si_{1 –} _x⁷²Ge_x Alloys

A. A. Ezhevskii, P. G. Sennikov, D. V. Guseinov, A. V. Soukhorukov, E. A. Kalinina and N. V. Abrosimov p. 1336 abstract

Time-Resolved Photoluminescence in Heterostructures with InGaAs:Cr/GaAs Quantum Wells

M. V. Dorokhin, P. B. Demina, Yu. A. Danilov, O. V. Vikhrova, Yu. M. Kuznetsov, M. V. Ved’, F. Iikawa and M. A. G. Balanta p. 1341 abstract

Relaxation of the Excited States of Arsenic in Strained Germanium

K. A. Kovalevsky, Yu. Yu. Choporova, R. Kh. Zhukavin, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, V. V. Tsyplenkov, V. D. Kukotenko, B. A. Knyazev and V. N. Shastin p. 1347 abstract

Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

A. N. Yablonskiy, A. V. Novikov, M. V. Stepikhova, S. M. Sergeev, N. A. Baidakova, M. V. Shaleev and Z. F. Krasilnik p. 1352 abstract

Comparison of the Efficiency of Promising Heterostructure Frequency-Multiplier Diodes of the THz-Frequency Range

D. I. Dyukov, A. G. Fefelov, A. V. Korotkov, D. G. Pavelyev, V. A. Kozlov, E. S. Obolenskaya, A. S. Ivanov and S. V. Obolensky p. 1360 abstract

Investigation of Stimulated Emission from HgTe/CdHgTe Quantum-Well Heterostructures in the 3–5 μm Atmospheric Transparency Window

L. A. Kushkov, V.V. Utochkin, V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, V. I. Gavrilenko, N. S. Kulikov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, A. A. Razova and S. V. Morozov p. 1365 abstract

Continuous-Wave Stimulated Emission in the 10–14-μm Range under Optical Excitation in HgCdTe/CdHgTe-QW Structures with Quasirelativistic Dispersion

V. V. Utochkin, V. Ya. Aleshkin, A. A. Dubinov, V. I. Gavrilenko, N. S. Kulikov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretsky, A. A. Razova and S. V. Morozov p. 1371 abstract

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