Contents
Semiconductors

Vol. 35, No. 10, 2001

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Some Aspects of SiC CVD Epitaxy

V. V. Zelenin, M. L. Korogodski, and A. A. Lebedev p. 1117  abstract

The Effect of CVD Growth Conditions of 6H-SiC Epilayers on Al Incorporation

V. V. Zelenin, M. L. Korogodski, and A. A. Lebedev p. 1120  abstract

Electronic and Optical Properties of Semiconductors

Analysis of the Temperature Dependence of Electron Concentration
in CdGeAs₂ Single Crystals

S. I. Borisenko p. 1123  abstract

Nonlinear and Dynamic Properties of Charge Transport in Polycrystalline Silicon
under Optical Illumination

K. M. Doshchanov p. 1126  abstract

Specific Features of the Liquid-Phase Epitaxial Growth of SiC Epilayers in Vacuum

D. A. Bauman, A. V. Gavrilin, V. A. Ivantsov, A. M. Morozov, and N. I. Kuznetsov p. 1132  abstract

Nonadditive Photoconductivity and Induced States in Zinc Selenide Crystals

V. P. Migal’ p. 1135  abstract

Electrical and Photoelectric Properties of Polycrystalline Textured CdTe

Yu. V. Klevkov, S. A. Kolosov, S. A. Medvedev, and A. F. Plotnikov p. 1139  abstract

Density of Localized States in (Pb_0.78Sn_0.22)_0.95In_0.05Te Solid Solutions

S. A. Nemov, D. A. Potapova, Yu. I. Ravich, and S. D. Khanin p. 1144  abstract

Interference of Polarized Beams near the Isotropic Point of the CdS Crystal

I. V. Brovchenko, V. I. Romanenko, and V. I. Tovstenko p. 1147  abstract

Random Potential Relief and Extrinsic Photoconductivity of Compensated Germanium

Yu. P. Druzhinin and E. G. Chirkova p. 1151  abstract

Semiconductor Structures, Interfaces, and Surfaces

Photocapacitance Effect at Low Temperatures in a Unipolar MIS Capacitor
with a Semiconductor Electrode Doped with Two Different Acceptor Impurities

N. A. Penin p. 1155  abstract

Thermoelectric Figure of Merit of a p–n Junction

Yu. I. Ravich and D. A. Pshena-Severin p. 1161  abstract

The Influence of the Illumination Direction on the Field Distribution
in High-Resistivity Metal–Semiconductor Structures

B. I. Reznikov p. 1166  abstract

Effect of the Annealing Temperature on Erbium Ion Electroluminescence
in Si:(Er,O) Diodes with (111) Substrate Orientation

N. A. Sobolev, A. M. Emel’yanov, and Yu. A. Nikolaev p. 1171  abstract

Low-Dimensional Systems

Study of Electron Capture by Quantum Dots Using Deep-Level Transient Spectroscopy

M. M. Sobolev, I. V. Kochnev^†, V. M. Lantratov, and N. N. Ledentsov p. 1175  abstract

The Role of Nitrogen in the Formation of Luminescent Silicon Nanoprecipitates
during Heat Treatment of SiO₂ Layers Implanted with Si⁺ ions

G. A. Kachurin, S. G. Yanovskaya, K. S. Zhuravlev, and M.-O. Ruault p. 1182  abstract

Amorphous, Vitreous, and Porous Semiconductors

Special Features of Photoelectric Properties of Nanostructured Films
of Hydrogenated Silicon

O. A. Golikova and M. M. Kazanin p. 1187  abstract

Numerical Calculation of the Temperature Dependences of Photoconductivity
in the p-type a-Si:H

S. V. Kuznetsov p. 1191  abstract

Effect of Doping with Nitrogen on Electrical Properties and Erbium Electroluminescence
of a-Si:H(Er) Films

O. I. Kon’kov, E. I. Terukov, and L. S. Granitsyna p. 1197  abstract

Physics of Semiconductor Devices

Difference Mode Generation in Injection Lasers

V. Ya. Aleshkin, A. A. Afonenko, and N. B. Zvonkov p. 1203  abstract

High Power InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers ( = 3.3 m)

M. Aydaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi,
N. M. Stus’, and G. N. Talalakin p. 1208  abstract

Fabry–Perot a-Si:H/a-SiO_x:H Microcavities with an Erbium-Doped a-Si:H Active Layer

V. G. Golubev, A. A. Dukin, A. V. Medvedev, A. B. Pevtsov, A. V. Sel’kin, and N. A. Feoktistov p. 1213  abstract

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