Contents
Semiconductors
Vol. 35, No. 10, 2001
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.
Atomic Structure and Nonelectronic Properties of Semiconductors
Some Aspects of SiC CVD Epitaxy
V. V. Zelenin, M. L. Korogodski, and A. A. Lebedev p. 1117 abstract
The Effect of CVD Growth Conditions of 6H-SiC Epilayers on Al Incorporation
V. V. Zelenin, M. L. Korogodski, and A. A. Lebedev p. 1120 abstract
Electronic and Optical Properties of Semiconductors
Analysis of the Temperature Dependence of Electron Concentration
in CdGeAs2 Single Crystals
S. I. Borisenko p. 1123 abstract
Nonlinear and Dynamic Properties of Charge Transport in Polycrystalline Silicon
under Optical Illumination
K. M. Doshchanov p. 1126 abstract
Specific Features of the Liquid-Phase Epitaxial Growth of SiC Epilayers in Vacuum
D. A. Bauman, A. V. Gavrilin, V. A. Ivantsov, A. M. Morozov, and N. I. Kuznetsov p. 1132 abstract
Nonadditive Photoconductivity and Induced States in Zinc Selenide Crystals
V. P. Migal p. 1135 abstract
Electrical and Photoelectric Properties of Polycrystalline Textured CdTe
Yu. V. Klevkov, S. A. Kolosov, S. A. Medvedev, and A. F. Plotnikov p. 1139 abstract
Density of Localized States in (Pb0.78Sn0.22)0.95In0.05Te Solid Solutions
S. A. Nemov, D. A. Potapova, Yu. I. Ravich, and S. D. Khanin p. 1144 abstract
Interference of Polarized Beams near the Isotropic Point of the CdS Crystal
I. V. Brovchenko, V. I. Romanenko, and V. I. Tovstenko p. 1147 abstract
Random Potential Relief and Extrinsic Photoconductivity of Compensated Germanium
Yu. P. Druzhinin and E. G. Chirkova p. 1151 abstract
Semiconductor Structures, Interfaces, and Surfaces
Photocapacitance Effect at Low Temperatures in a Unipolar MIS Capacitor
with a Semiconductor Electrode Doped with Two Different Acceptor Impurities
N. A. Penin p. 1155 abstract
Thermoelectric Figure of Merit of a pn Junction
Yu. I. Ravich and D. A. Pshena-Severin p. 1161 abstract
The Influence of the Illumination Direction on the Field Distribution
in High-Resistivity MetalSemiconductor Structures
B. I. Reznikov p. 1166 abstract
Effect of the Annealing Temperature on Erbium Ion Electroluminescence
in Si:(Er,O) Diodes with (111) Substrate Orientation
N. A. Sobolev, A. M. Emelyanov, and Yu. A. Nikolaev p. 1171 abstract
Low-Dimensional Systems
Study of Electron Capture by Quantum Dots Using Deep-Level Transient Spectroscopy
M. M. Sobolev, I. V. Kochnev, V. M. Lantratov, and N. N. Ledentsov p. 1175 abstract
The Role of Nitrogen in the Formation of Luminescent Silicon Nanoprecipitates
during Heat Treatment of SiO2 Layers Implanted with Si+ ions
G. A. Kachurin, S. G. Yanovskaya, K. S. Zhuravlev, and M.-O. Ruault p. 1182 abstract
Amorphous, Vitreous, and Porous Semiconductors
Special Features of Photoelectric Properties of Nanostructured Films
of Hydrogenated Silicon
O. A. Golikova and M. M. Kazanin p. 1187 abstract
Numerical Calculation of the Temperature Dependences of Photoconductivity
in the p-type a-Si:H
S. V. Kuznetsov p. 1191 abstract
Effect of Doping with Nitrogen on Electrical Properties and Erbium Electroluminescence
of a-Si:H(Er) Films
O. I. Konkov, E. I. Terukov, and L. S. Granitsyna p. 1197 abstract
Physics of Semiconductor Devices
Difference Mode Generation in Injection Lasers
V. Ya. Aleshkin, A. A. Afonenko, and N. B. Zvonkov p. 1203 abstract
High Power InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers ( = 3.3
m)
M. Aydaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi,
N. M. Stus, and G. N. Talalakin p. 1208 abstract
FabryPerot a-Si:H/a-SiOx:H Microcavities with an Erbium-Doped a-Si:H Active Layer
V. G. Golubev, A. A. Dukin, A. V. Medvedev, A. B. Pevtsov, A. V. Selkin, and N. A. Feoktistov p. 1213 abstract
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