Vol. 53, No. 10, 2019

Semiconductors

XXIII International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019

Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction

N. V. Vostokov, V. M. Daniltsev, S. A. Kraev, V. L. Krukov, E. V. Skorokhodov, S. S. Strelchenko and V. I. Shashkin p. 1279 abstract

2D Bragg Resonators Based on Planar Dielectric Waveguides (from Theory to Model-Based Testing)

N. S. Ginzburg, N. Yu. Peskov, V. Yu. Zaslavsky, E. R. Kocharovskaya, A. M. Malkin, A. S. Sergeev, V. R. Baryshev, M. D. Proyavin and D. I. Sobolev p. 1282 abstract

On the Asymmetric Generation of a Superradiant Laser with a Symmetric Low-Q Cavity

Vl. V. Kocharovsky, V. A. Kukushkin, S. V. Tarasov, E. R. Kocharovskaya and V. V. Kocharovsky p. 1287 abstract

Features of the Simultaneous Generation of Low-Q and High-Q Modes in Heterolasers Based on Quantum Dots with a Long Incoherent Relaxation Time of Optical Dipole Oscillations

E. R. Kocharovskaya, A. V. Mishin, I. S. Ryabinin and V. V. Kocharovsky p. 1295 abstract

Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots

I. A. Derebezov, V. A. Gaisler, A. V. Gaisler, D. V. Dmitriev, A. I. Toropov, M. von Helversen, C. de la Haye, S. Bounouar and S. Reitzenstein p. 1304 abstract

Coherence Dynamics of the Exciton-Polariton System in GaAs Microcavities under Pulse Resonant Photoexcitation

V. D. Kulakovskii and A. A. Demenev p. 1308 abstract

Interaction of a Tamm Plasmon and Exciton in an Organic Material in the Strong Coupling Mode

K. M. Morozov, A. V. Belonovskii, K. A. Ivanov, E. I. Girshova and M. A. Kaliteevski p. 1314 abstract

Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates

A. V. Novikov, D. V. Yurasov, N. A. Baidakova, P. A. Bushuykin, B. A. Andreev, P. A. Yunin, M. N. Drozdov, A. N. Yablonskiy, M. A. Kalinnikov and Z. F. Krasilnik p. 1318 abstract

Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics

D. V. Yurasov, N. A. Baidakova, V. A. Verbus, N. S. Gusev, A. I. Mashin, E. E. Morozova, A. V. Nezhdanov, A. V. Novikov, E. V. Skorohodov, D. V. Shengurov and A. N. Yablonskiy p. 1324 abstract

Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals

Zn. V. Smagina, V. A. Zinovyev, E. E. Rodyakina, B. I. Fomin, M. V. Stepikhova, A. N. Yablonskiy, S. A. Gusev, A. V. Novikov and A. V. Dvurechenskii p. 1329 abstract

On the Intracenter Relaxation of Shallow Antimony Donors in Strained Germanium

V. V. Tsyplenkov and V. N. Shastin p. 1334 abstract

On the Two-Phonon Relaxation of Excited States of Boron Acceptors in Diamond

N. A. Bekin p. 1340 abstract

Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers

E. A. Arkhipova, E. V. Demidov, M. N. Drozdov, S. A. Kraev, V. I. Shashkin, M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishchev, V. A. Isaev and S. A. Bogdanov p. 1348 abstract

Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors

T. A. Shobolova, A. V. Korotkov, E. V. Petryakova, A. V. Lipatnikov, A. S. Puzanov, S. V. Obolensky and V. A. Kozlov p. 1353 abstract

Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers

B. A. Andreev, D. N. Lobanov, L. V. Krasil’nikova, P. A. Bushuykin, A. N. Yablonskiy, A. V. Novikov, V. Yu. Davydov, P. A. Yunin, M. I. Kalinnikov, E. V. Skorohodov and Z. F. Krasil’nik p. 1357 abstract

Residual-Photoconductivity Spectra in HgTe/CdHgTe Quantum-Well Heterostructures

K. E. Spirin, D. M. Gaponova, V. I. Gavrilenko, N. N. Mikhailov and S. A. Dvoretsky p. 1363 abstract

Electronic Properties of Semiconductors

Magnetosonic Waves in a Two-Dimensional Electron Fermi Liquid

P. S. Alekseev p. 1367 abstract

Microwave Magnetic Absorption in HgSe with Co and Ni Impurities

A. I. Veinger, I. V. Kochman, D. A. Frolov, V. I. Okulov, T. E. Govorkova and L. D. Paranchich p. 1375 abstract

Surfaces, Interfaces, and Thin Films

Electronic States of Nanosystems Based on Cadmium Sulfide in the Zinc-Blende Form

V. G. Zavodinsky and A. P. Kuz’menko p. 1381 abstract

Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process

N. D. Prasolov, A. A. Gutkin and P. N. Brunkov p. 1386 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Influence of Hydrogen on the Electrical Properties of Pd/InP Structures

V. A. Shutaev, V. G. Sidorov, E. A. Grebenshchikova, L. K. Vlasov, A. A. Pivovarova and Yu. P. Yakovlev p. 1389 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles

M. M. Sobolev, D. A. Yavsin and S. A. Gurevich p. 1393 abstract

Carbon Systems

Sharp Drop in the Mobility of Holes with a Decrease in Their Two-Dimensional Concentration by an External Voltage in Boron δ-Doped Diamond Layers

V. A. Kukushkin p. 1398 abstract

Physics of Semiconductor Devices

Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels

N. Yu. Gordeev, A. S. Payusov and M. V. Maximov p. 1405 abstract

Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes

A. A. Lebedev, V. V. Kozlovski, P. A. Ivanov, M. E. Levinshtein and A. V. Zubov p. 1409 abstract

Errata

Erratum to: Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two-Dimensional Electron Gas

H. Khmissi and A. M. El Sayed p. 1414 abstract

Contents