Vol. 50, No. 10, 2016

Semiconductors

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic Properties of Semiconductors

Energy Spectrum of Charge Carriers in TlIn_{1 –} _xYb_xTe₂ Solid Solutions

F. F. Aliev, U. M. Agaeva and M. M. Zarbaliev p. 1273 abstract

First-Principles Calculations of the Electronic and Structural Properties of GaSb

E.-E. Castaño-González, N. Seña, V. Mendoza-Estrada, R. González-Hernández, A. Dussan and F. Mesa p. 1280 abstract

Study of the Effect of Doping on the Temperature Stability of the Optical Properties of Germanium Single Crystals

O. I. Podkopaev, A. F. Shimanskiy, S. A. Kopytkova, R. A. Filatov and N. O. Golubovskaya p. 1287 abstract

Some Challenging Points in the Identification of Defects in Floating-Zone n-Type Silicon Irradiated with 8 and 15 MeV Protons

V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovskii, G. A. Oganesyan and D. S. Poloskin p. 1291 abstract

Room-Temperature Operation of Quantum Cascade Lasers at a Wavelength of 5.8 μm

A. V. Babichev, A. Bousseksou, N. A. Pikhtin, I. S. Tarasov, E. V. Nikitina, A. N. Sofronov, D. A. Firsov, L. E. Vorobjev, I. I. Novikov, L. Ya. Karachinsky and A. Yu. Egorov p. 1299 abstract

Spectroscopy, Interaction with Radiation

UV and IR Emission Intensity in ZnO Films, Nanorods, and Bulk Single Crystals Doped with Er and Additionally Introduced Impurities

M. M. Mezdrogina, A. Ya. Vinogradov, R. V. Kuzmin, V. S. Levitski, Yu. V. Kozanova, N. V. Lyanguzov and M. V. Chukichev p. 1304 abstract

Self-Synchronization of the Modulation of Energy-Levels Population with Electrons in GaAs Induced by Picosecond Pulses of Probe Radiation and Intrinsic Stimulated Emission

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev and A. N. Krivonosov p. 1312 abstract

Reflectance of a PbSb₂Te₄ Crystal in a Wide Spectral Range

S. A. Nemov, Yu. V. Ulashkevich, A. V. Povolotskii and I. I. Khlamov p. 1322 abstract

Surfaces, Interfaces, and Thin Films

The C 1s Core Level Spectroscopy of Carbon Atoms at the Surface SiC/Si(111)-4° Layer and Cs/SiC/Si(111)-4° Interface

G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, A. V. Osipov and B. V. Senkovskiy p. 1327 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Dielectric Properties of DNA Oligonucleotides on the Surface of Silicon Nanostructures

N. T. Bagraev, A. L. Chernev, L. E. Klyachkin, A. M. Malyarenko, A. K. Emel’yanov and M. V. Dubina p. 1333 abstract

Physics of Semiconductor Devices

GaSb Laser-Power (λ = 1550 nm) Converters: Fabrication Method and Characteristics

V. P. Khvostikov, S. V. Sorokina, O. A. Khvostikova, R. V. Levin, B. V. Pushnyi, N. Kh. Timoshina and V. M. Andreev p. 1338 abstract

Effect of the Chemical Composition of Cu–In–Ga–Se Layers on the Photoconductivity and Conversion Efficiency of CdS/CIGSe Solar Cells

G. F. Novikov, Wei-Tao Tsai, K. V. Bocharov, E. V. Rabenok, Ming-Jer Jeng, Liann-Be Chang, Wu-Shiung Feng, Jian-Ping Ao and Yun Sun p. 1344 abstract

Mechanism of Microplasma Turn-off Upon the Avalanche Breakdown of Silicon p–n Structures

A. M. Musaev p. 1352 abstract

On the Main Photoelectric Characteristics of Three-Junction InGaP/InGaAs/Ge Solar Cells in a Broad Temperature Range (–197°C ≤ T ≤ +85°C)

V. M. Andreev, D. A. Malevskiy, P. V. Pokrovskiy, V. D. Rumyantsev and A. V. Chekalin p. 1356 abstract

Theory of the Power Characteristics of Quantum-Well Lasers with Asymmetric Barrier Layers: Inclusion of Asymmetry in Electron- and Hole-State Filling

L. V. Asryan, F. I. Zubov, N. V. Kryzhanovskaya, M. V. Maximov and A. E. Zhukov p. 1362 abstract

Efficiency Droop in GaN LEDs at High Injection Levels: Role of Hydrogen

N. I. Bochkareva, I. A. Sheremet and Yu. G. Shreter p. 1369 abstract

Fabrication of a Terahertz Quantum-Cascade Laser with a Double Metal Waveguide Based on Multilayer GaAs/AlGaAs Heterostructures

R. A. Khabibullin, N. V. Shchavruk, A. Yu. Pavlov, D. S. Ponomarev, K. N. Tomosh, R. R. Galiev, P. P. Maltsev, A. E. Zhukov, G. E. Cirlin, F. I. Zubov and Zh. I. Alferov p. 1377 abstract

Effect of the Parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN Heterostructures with a Two-Dimensional Electron Gas on their Electrical Properties and the Characteristics of Transistors on Their Basis

A. F. Tsatsulnikov, V. W. Lundin, E. E. Zavarin, M. A. Yagovkina, A. V. Sakharov, S. O. Usov, V. E. Zemlyakov, V. I. Egorkin, K. A. Bulashevich, S. Yu. Karpov and V. M. Ustinov p. 1383 abstract

Polarization Characteristics of 850-nm Vertical-Cavity Surface-Emitting Lasers with Intracavity Contacts and a Rhomboidal Oxide Current Aperture

M. A. Bobrov, N. A. Maleev, S. A. Blokhin, A. G. Kuzmenkov, A. P. Vasil’ev, A. A. Blokhin, Yu. A. Guseva, M. M. Kulagina, Yu. M. Zadiranov, S. I. Troshkov, V. Lysak and V. M. Ustinov p. 1390 abstract

Study of the Pulse Characteristics of Semiconductor Lasers with a Broadened Waveguide at Low Temperatures (110–120 K)

D. A. Veselov, I. S. Shashkin, Yu. K. Bobretsova, K. V. Bakhvalov, A. V. Lutetskiy, V. A. Kapitonov, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova and I. S. Tarasov p. 1396 abstract

Enhancement of the Spectral Sensitivity of Photodiodes for the mid-IR Spectral Range

E. V. Kunitsyna, E. A. Grebenshchikova, G. G. Konovalov, I. A. Andreev and Yu. P. Yakovlev p. 1403 abstract

Laser Characteristics of an Injection Microdisk with Quantum Dots and its Free-Space Outcoupling Efficiency

F. I. Zubov, N. V. Kryzhanovskaya, E. I. Moiseev, Yu. S. Polubavkina, O. I. Simchuk, M. M. Kulagina, Yu. M. Zadiranov, S. I. Troshkov, A. A. Lipovskii, M. V. Maximov and A. E. Zhukov p. 1408 abstract

On the Gain Properties of “Thin” Elastically Strained InGaAs/InGaAlAs Quantum Wells Emitting in the Near-Infrared Spectral Region near 1550 nm

I. I. Novikov, L. Ya. Karachinsky, E. S. Kolodeznyi, V. E. Bougrov, A. S. Kurochkin, A. G. Gladyshev, A. V. Babichev, I. M. Gadzhiev, M. S. Buyalo, Yu. M. Zadiranov, A. A. Usikova, Yu. M. Shernyakov, A. V. Savelyev, I. A. Nyapshaev and A. Yu. Egorov p. 1412 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Investigation of the Fabrication Processes of AlGaN/AlN/GaN НЕМТs with in situ Si₃N₄ Passivation

K. N. Tomosh, A. Yu. Pavlov, V. Yu. Pavlov, R. A. Khabibullin, S. S. Arutyunyan and P. P. Maltsev p. 1416 abstract