Contents
Semiconductors

Vol. 47, No. 10, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic Properties of Semiconductors

Structural and Electronic Properties of Si_1–xGe_x Binary Semiconducting Alloys
under the Effect of Temperature and Pressure

A. R. Degheidy and E. B. Elkenany p. 1283  abstract

Numerical Modeling of the Polarization Current of Geminate Pairs in Disordered Polymers with Traps

N. A. Korolev, V. R. Nikitenko, and A. P. Tyutnev p. 1292  abstract

Obtaining of SmS Based Semiconducting Material and Investigation of Its Electrical Properties

V. V. Kaminskii, Shinji Hirai, Toshihiro Kuzuya, S. M. Solov’ev, N. N. Stepanov, and N. V. Sharenkova p. 1298  abstract

Effect of Impurities on the Color of Polycrystalline Zinc Selenide

A. S. Sherstobitova and A. D. Yaskov p. 1301  abstract

Surfaces, Interfaces, and Thin Films

Development of New CdTe Based Hybrid Semiconducting Layers Produced
in one Step by Electro-Codeposition

C. Mitzithra, E. Chountoulesi, S. Hamilakis, K. Kordatos, C. Kollia, and Z. Loizos p. 1303  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

The Analysis of Leakage Current in MIS Au/SiO₂/n-GaAs at Room Temperature

H. Altuntas and S. Ozcelik p. 1308  abstract

Coupled Plasma Waves in a System of Two Two-Dimensional Superlattices
in the Presence of a Quantizing Electric Field

S. Yu. Glazov, E. S. Kubrakova, and N. E. Mescheryakova p. 1312  abstract

Synchrotron Study of the Formation of Nanoclusters
in Al₂O₃/SiO_x/Al₂O₃/SiO_x/…/Si(100) Multilayer Nanostructures

S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, K. N. Pankov,
A. V. Ershov, D. A. Grachev, A. I. Mashin, and E. P. Domashevskaya p. 1316  abstract

Ultra-Low Density InAs Quantum Dots

V. G. Dubrovskii, G. E. Cirlin, P. A. Brunkov, U. Perimetti, and N. Akopyan p. 1324  abstract

Characterization of Defects in Colloidal CdSe Nanocrystals
by the Modified Thermostimulated Luminescence Technique

A. V. Katsaba, V. V. Fedyanin, S. A. Ambrozevich, A. G. Vitukhnovsky, A. N. Lobanov,
A. S. Selyukov, R. B. Vasiliev, I. G. Samatov, and P. N. Brunkov p. 1328  abstract

Effect of the Annealing Temperature on the Low-Temperature Photoluminescence
in Si:Er Light-Emitting Structures Grown by Molecular-Beam Epitaxy

B. A. Andreev, N. A. Sobolev, D. V. Denisov, and E. I. Shek p. 1333  abstract

The Role of Electron–Electron Interaction in the Process
of Charge-Carrier Capture in Deep Quantum Wells

L. V. Danilov and G. G. Zegrya p. 1336  abstract

Composite System Based on CdSe/ZnS Quantum Dots and GaAs Nanowires

A. I. Khrebtov, V. G. Talalaev, P. Werner, V. V. Danilov, M. V. Artemyev,
B. V. Novikov, I. V. Shtrom, A. S. Panfutova, and G. E. Cirlin p. 1346  abstract

Amorphous, Vitreous, and Organic Semiconductors

Study of Applicability of Boltzmann-statistics and Two Mobility Models for Organic Semiconductors

Zhou Chen-Xin, Sun Jiu-Xun, Deng Zhi-Jun, and Zhou Shuai p.1351  abstract

Study of the Electronic Properties of Hydrogenated Amorphous
Silicon Films by Femtosecond Spectroscopy

M. G. Sevastyanov, V. S. Lobkov, A. G. Shmelev, A. V. Leontev,
V. L. Matuhin, A. V. Bobyl, E. I. Terukov, and A. V. Kukin p. 1358  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Study of the Interaction Mechanisms between Absorbed NO₂ and por-Si/SnO_x Nanocomposite Layers

V. V. Bolotov, V. E. Kan, R. K. Makushenko, M. Yu. Biryukov, K. E. Ivlev, and V. E. Roslikov p. 1362  abstract

Optical Constants of Silicon Nanoparticle Thin Films Grown by Laser Electrodispersion

O. S. Yeltsina, D. A. Andronikov, M. Yu. Semerukhin, D. A. Yavsin,
J. S. Vainshtein, O. M. Sreseli, and S. A. Gurevich p. 1367  abstract

Physics of Semiconductor Devices

Photoelectric Converters with Graded-Gap Layers Based on ZnSe

Yu. N. Bobrenko, S. Yu. Pavelets, A. M. Pavelets, and N. V. Yaroshenko p. 1372  abstract

Method for Studying the Light-Induced Degradation of -Si:H/c-Si:H Tandem
Photovoltaic Converters under Increased Illuminance

O. I. Chesta, G. M. Ablayev, A. A. Blatov, A. V. Bobyl, V. M. Emelyanov,
D. L. Orekhov, E. I. Terukov, N. Kh. Timoshina, and M. Z. Shvarts p. 1376  abstract

Influence of Temperature on the Mechanism of Carrier Injection
in Light-Emitting Diodes Based on InGaN/GaN Multiple Quantum Wells

I. A. Prudaev, I. Yu. Golygin, S. B. Shirapov, I. S. Romanov, S. S. Khludkov, and O. P. Tolbanov p. 1382  abstract

Room-Temperature Lasing in Microring Cavities with an InAs/InGaAs Quantum-Dot Active Region

N. V. Kryzhanovskaya, A. E. Zhukov, A. M. Nadtochy, M. V. Maximov, E. I. Moiseev,
M. M. Kulagina, A. V. Savelev, E. M. Arakcheeva, A. A. Lipovskii, F. I. Zubov,
A. Kapsalis, C. Mesaritakis, D. Syvridis, A. Mintairov, and D. Livshits p. 1387  abstract

Comparative Study of InP/InGaAs Double Heterojunction Bipolar Transistors
with InGaAsP Spacer at Base-Collector Junction

Jung-Hui Tsai, Ching-Sung Lee, Jia-Cing Jhou, You-Ren Wu,
Chung-Cheng Chiang, Yi-Ting Chao, and Wen-Chau Liu p. 1391  abstract

Effect of Carrier Dynamics and Temperature on Two-State Lasing
in Semiconductor Quantum Dot Lasers

V. V. Korenev, A. V. Savelyev, A. E. Zhukov, A. V. Omelchenko, and M. V. Maximov p. 1397  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Synthesis and Determination of the Structural and Optical Characteristics
of cBN Micropowder with Eu³⁺ Ions

S. V. Leonchik and A. V. Karotki p. 1405  abstract

Optical Properties of ITO Films Obtained by High-Frequency Magnetron Sputtering
with Accompanying Ion Treatment

P. N. Krylov, R. M. Zakirova, and I. V. Fedotova p. 1412  abstract

Effect of an Arsenic Flux on the Molecular-Beam Epitaxy
of Self-Catalytic (Ga,Mn)As Nanowire Crystals

N. V. Sibirev, A. D. Bouravleuv, Yu. M. Trushkov,
D. V. Beznasyuk, Yu. B. Samsonenko, and G. E. Cirlin p. 1416  abstract

Models of the Formation of Oxide Phases in Nanostructured Materials Based
on Lead Chalcogenides Subjected to Treatment in Oxygen and Iodine Vapors

E. V. Maraeva, V. A. Moshnikov, and Yu. M. Tairov p. 1422  abstract

Ge–Te–Se and Ge–Te–Se–S Alloys as New Materials for Acousto-Optic Devices
of the Near-, Mid-, and Far-Infrared Spectral Regions

L. A. Kulakova, B. T. Melekh, S. A. Grudinkin, and A. P. Danilov p.1426  abstract

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