Contents
Semiconductors

Vol. 45, No. 10, 2011

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic Properties of Semiconductors

Optical Spectra of Six Silicon Phases

V. V. Sobolev, V. Val. Sobolev, and S. V. Shushkov p. 1247  abstract

Effect of Pressure and Temperature on Electronic Structure
of GaN in the Zinc-Blende Structure

A. R. Degheidy and E. B. Elkenany p. 1251  abstract

Structure and Magnetic Properties of InSe Single Crystals Intercalated by Nickel

I. M. Stakhira, N. K. Tovstyuk, V. L. Fomenko, V. M. Tsmots, and A. N. Shchupliak p. 1258  abstract

Specific Features of the Anisotropy of Low-Temperature Microwave Magnetoresistivity
of Lightly Doped p-Ge Due to the Presence of Light and Heavy Holes

A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, and S. I. Goloshchapov p. 1264  abstract

Spectroscopy, Interaction with Radiation

Band Gap of CdTe and Cd_0.9Zn_0.1Te crystals

L. A. Kosyachenko, V. M. Sklyarchuk, O. V. Sklyarchuk, and O. L. Maslyanchuk p. 1273  abstract

Surfaces, Interfaces, and Thin Films

The Effect of Sn Impurity on the Optical and Structural Properties of Thin Silicon Films

V. V. Voitovych, V. B. Neimash, N. N. Krasko, A. G. Kolosiuk, V. Yu. Povarchuk,
R. M. Rudenko, V. A. Makara, R. V. Petrunya, V. O. Juhimchuk, and V. V. Strelchuk p. 1281  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Electrical Characteristics of Au/n-GaAs Structures with Thin and Thick SiO₂ Dielectric Layer

H. Altuntas, S. Altindal, S. Corekci, M. K. Ozturk, and S. Ozcelik p. 1286  abstract

Main Features of Photostimulated Ion Transport in Heterojunctions Based
on Mixed Ion–Electron (Hole) Conductors and the Model of a Thin-Film Ion Accelerator

A. I. Stetsun and L. A. Dvorina p. 1291  abstract

Nucleation of CdTe Islands during Synthesis from the Vapor Phase on a Cooled Substrate

A. P. Belyaev, V. P. Rubets, V. V. Antipov, and E. O. Eremina p. 1297  abstract

Magnetoluminescence of CdTe/MnTe/CdMgTe Heterostructures
with Ultrathin MnTe Layers

V. F. Agekyan, P. O. Holz, G. Karczewski, V. N. Katz, E. S. Moskalenko,
A. Yu. Serov, and N. G. Filosofov p. 1301  abstract

A DLTS Study of 4H-SiC-Based p–n Junctions Fabricated by Boron Implantation

P. A. Ivanov, A. S. Potapov, T. P. Samsonova, O. Korol’kov, and N. Sleptsuk p. 1306  abstract

Formation of Light-Emitting Nanostructures in Layers
of Stoichiometric SiO₂ Irradiated with Swift Heavy Ions

G. A. Kachurin, S. G. Cherkova, V. A. Skuratov, D. V. Marin,
V. G. Kesler, and V. A. Volodin p. 1311  abstract

Photoelectric Properties of Porous GaN/SiC Heterostructures

M. G. Mynbaeva, A. A. Sitnikova, and K. D. Mynbaev p.1317  abstract

Scattering and Electron Mobility in Combination-Doped HFET-Structures
AlGaAs/InGaAs/AlGaAs with High Electron Density

R. A. Khabibullin, I. S. Vasil’evskii, G. B. Galiev, E. A. Klimov, D. S. Ponomarev,
R. A. Lunin, and V. A. Kulbachinskii p. 1321  abstract

Features of Molecular-Beam Epitaxy and Structural Properties
of AlInSb-Based Heterostructures

A. N. Semenov, B. Ya. Meltser, V. A. Solov’ev, T. A. Komissarova, A. A. Sitnikova,
D. A. Kirylenko, A. M. Nadtochyi, T. V. Popova, P. S. Kop’ev, and S. V. Ivanov p. 1327  abstract

Interfacial Luminescence in an InAs/InAsSbP Isotype Type II Heterojunction
at Room Temperature

M. M. Grigoryev, E. V. Ivanov, and K. D. Moiseev p. 1334  abstract

Amorphous, Vitreous, and Organic Semiconductors

Photophysical and Electrical Properties of Polyphenylquinolines Containing Carbazole
or indolo[3,2-b]Carbazole Fragments as New Optoelectronic Materials

V. M. Svetlichnyi, E. L. Aleksandrova, L. A. Myagkova, N. V. Matyushina, T. N. Nekrasova,
R. Yu. Smyslov, A. R. Tameev, S. N. Stepanenko, A. V. Vannikov, and V. V. Kudryavtsev p. 1339  abstract

Tin Impurity Centers in Glassy Germanium Chalcogenides

G. A. Bordovsky, P. V. Gladkikh, M. Yu. Kozhokar, A. V. Marchenko,
P. P. Seregin, and E. I. Terukov p. 1346  abstract

Physics of Semiconductor Devices

Study of the Effect of the Gate Region Parameters on Static Characteristics
of Microwave Field-Effect Transistors Based
on Pseudomorphic AlGaAs–InGaAs–GaAs Heterostructures

V. G. Tikhomirov, N. A. Maleev, A. G. Kuzmenkov, Yu. V. Solov’ev,
A. G. Gladyshev, M. M. Kulagina, V. E. Zemlyakov, K. V. Dudinov, V. B. Yankevich,
A. V. Bobyl, and V. M. Ustinov p. 1352  abstract

Simulation of Optical Properties of Silicon Solar Cells Textured
with Penetrating V-Shaped Grooves

G. G. Untila, A. P. Palov, A. Yu. Poroykov, T. V. Rakhimova, Yu. A. Mankelevich,
T. N. Kost, A. B. Chebotareva, and V. V. Dvorkin p. 1357  abstract

Diode Lasers Emitting at 1220 nm with a Highly Strained GaInAs Quantum Well
and GaAsP Compensating Layers MOCVD-Grown on a GaAs Substrate

D. A. Vinokurov, V. A. Kapitonov, D. N. Nikolaev, N. A. Pikhtin, A. L. Stankevich,
V. V. Shamakhov, A. D. Bondarev, L. S. Vavilova, and I. S. Tarasov p. 1364  abstract

On the Problem of the Radiation Hardness of SiC Nuclear Radiation Detectors
at High Working Temperatures

A. M. Ivanov, A. V. Sadokhin, N. B. Strokan, and A. A. Lebedev p. 1369  abstract

I–V Characteristics of High-Voltage 4H–SiC Diodes with a 1.1-eV Schottky Barrier

P. A. Ivanov, I. V. Grekhov, O. I. Kon’kov, A. S. Potapov,
T. P. Samsonova, and T. V. Semenov p. 1374  abstract

Analysis of Quenching Conditions of Fabry–Perot Mode Lasing
in Semiconductor Stripe-Contact Lasers

S. O. Slipchenko, A. A. Podoskin, D. A. Vinokurov, A. L. Stankevich, A. Y. Leshko,
N. A. Pikhtin, V. V. Zabrodskiy, and I. S. Tarasov p.1378  abstract

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