Contents
Semiconductors

Vol. 44, No. 10, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Oxygen in Ge:Sn

L. I. Khirunenko, Yu. V. Pomozov, M. G. Sosnin, A. V. Duvanskii,
N. V. Abrosimov, and H. Riemann p. 1253  abstract

Mesoscopic Variance of Dislocation Displacements in Semiconductor Crystals

B. V. Petukhov p. 1258  abstract

Electrical and Optical Properties of Semiconductors

Specific Features of Intervalley Scattering of Charge Carriers in n-Si at High Temperatures

A. V. Fedosov, S. V. Luniov, and S. A. Fedosov p. 1263  abstract

Numerical Simulation of Evolution of Electron–Hole Avalanches
and Streamers in Silicon in a Uniform Electric Field

A. S. Kyuregyan p. 1266  abstract

Heat-Transfer Phenomena in Alloys

S. A. Aliev, R. I. Selim-zade, and S. S. Ragimov p. 1275  abstract

On the Nature of Charge Carrier Scattering in Ag₂Se at Low Temperatures

M. B. Jafarov p. 1280  abstract

Repetition of the Shape of the Ultrafast Self-Modulation
of the Optical Absorption Spectrum upon Varying the Energy of Pulse of GaAs Pumping

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, and A. N. Krivonosov p. 1285  abstract

Spontaneous Emission of Holes Excited by an Electric Field in Germanium

Ya. E. Pokrovskii and N. A. Khvalkovskii p. 1289  abstract

Semiconductor Structures, Interfaces, and Surfaces

Differential Capacitance of a Semiconductor Film

D. E. Tsurikov and A. M. Yafyasov p. 1292  abstract

Quantum Model of Electron Accumulation at Charged Boundaries
of Heavily Doped Semiconductor Films

V. A. Gergel and A. V. Verhovtseva p. 1297  abstract

Low-Dimensional Systems

Mixing of Hole States in GaAs/AlAs(110) Heterostructures

V. N. Chernyshov p. 1301  abstract

Analysis of Mechanisms of Carrier Emission
in the p–i–n Structures with In(Ga)As Quantum Dots

E. S. Shatalina, S. A. Blokhin, A. M. Nadtochy, A. S. Payusov, A. V. Savelyev,
M. V. Maximov, A. E. Zhukov, N. N. Ledentsov, A. R. Kovsh,
S. S. Mikhrin, and V. M. Ustinov p. 1308  abstract

Quantum Wells on 3C-SiC/NH-SiC Heterojunctions.
Calculation of Spontaneous Polarization and Electric Field Strength in Experiments

I. S. Sbruev and S. B. Sbruev p.1313  abstract

Simulation of Relaxation Times and Energy Spectra of the CdTe/Hg_1–xCd_xTe/CdTe
Quantum Well for Variable Valence Band Offset, Well Width, and Composition x

E. O. Melezhik, J. V. Gumenjuk-Sichevska, and F. F. Sizov p. 1321  abstract

Quantum Spin Hall Effect in Nanostructures Based on Cadmium Fluoride

N. T. Bagraev, O. N. Guimbitskaya, L. E. Klyachkin, A. A. Koudryavtsev,
A. M. Malyarenko, V. V. Romanov, A. I. Ryskin, and A. S. Shcheulin p. 1328  abstract

Formation of Composite InGaN/GaN/InAlN Quantum Dots

A. F. Tsatsul’nikov, E. E. Zavarin, N. V. Kryzhanovskaya, W. V. Lundin,
A. V. Saharov, S. O. Usov, P. N. Brunkov, V. V. Goncharov,
N. A. Cherkashin, and M. Hytch p. 1338  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

The Effect of the Dynamic Adsorption Mode on Impedance
of Composite Structures with Porous Silicon

A. Yu. Karlach, G. V. Kuznetsov, S. V. Litvinenko,
Yu. S. Milovanov, and V. A. Skryshevsky p. 1342  abstract

The Structure and Optical Properties of Nanocrytalline Lead Sulfide Films

S. I. Sadovnikov, N. S. Kozhevnikova, and A. A. Rempel p. 1349  abstract

Physics of Semiconductor Devices

A Single-Spatial-Mode Semiconductor Laser Based
on InAs/InGaAs Quantum Dots with a Diffraction Filter of Optical Modes

N. Yu. Gordeev, I. I. Novikov, A. M. Kuznetsov, Yu. M. Shernyakov, M. V. Maximov,
A. E. Zhukov, A. V. Chunareva, A. S. Payusov, D. A. Livshits, and A. R. Kovsh p. 1357  abstract

Recombination of Charge Carriers in the GaAs-Based p–i–n Diode

G. I. Ayzenshtat, A. Y. Yushenko, S. M. Gushchin, D. V. Dmitriev,
K. S. Zhuravlev, and A. I. Toropov p. 1362  abstract

The Temperature Dependence of Internal Optical Losses
in Semiconductor Lasers ( = 900–920 nm)

N. A. Pikhtin, S. O. Slipchenko, I. S. Shashkin, M. A. Ladugin,
A. A. Marmalyuk, A. A. Podoskin, and I. S. Tarasov p. 1365  abstract

Temperature Dependence of the Threshold Current Density
and External Differential Quantum Efficiency of Semiconductor Lasers ( = 900–920 nm)

M. A. Ladugin, A. V. Lyutetskiy, A. A. Marmalyuk, A. A. Padalitsa, N. A. Pikhtin,
A. A. Podoskin, N. A. Rudova, S. O. Slipchenko, I. S. Shashkin,
A. D. Bondarev, and I. S. Tarasov p. 1370  abstract

Open-Circuit Voltage, Fill Factor, and Efficiency of a CdS/CdTe Solar Cell

L. A. Kosyachenko^ and E. V. Grushko p. 1375  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Dependence of the Growth Rate of an AlN Layer on Nitrogen Pressure
in a Reactor for Sublimation Growth of AlN Crystals

A. A. Wolfson and E. N. Mokhov p. 1383  abstract

Crystalline Quality Improvement in Silicon Films on Sapphire
Using Recrystallization from the Silicon–Sapphire Interface

P. A. Alexandrov, K. D. Demakov, S. G. Shemardov, and Yu. Yu. Kuznetsov p. 1386  abstract

Electrical Characteristics of Multigraphene Films Grown
on High-Resistivity Silicon Carbide Substrates

A. A. Lebedev, A. M. Strel’chuk, D. V. Shamshur, G. A. Oganesyan,
S. P. Lebedev, M. G. Mynbaeva, and A. V. Sadokhin p.1389  abstract

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