Contents
Semiconductors
Vol. 44, No. 10, 2010
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Atomic Structure and Nonelectronic Properties of Semiconductors
Oxygen in Ge:Sn
L. I. Khirunenko, Yu. V. Pomozov, M. G. Sosnin, A. V. Duvanskii,
N. V. Abrosimov, and H. Riemann p. 1253 abstract
Mesoscopic Variance of Dislocation Displacements in Semiconductor Crystals
B. V. Petukhov p. 1258 abstract
Electrical and Optical Properties of Semiconductors
Specific Features of Intervalley Scattering of Charge Carriers in n-Si at High Temperatures
A. V. Fedosov, S. V. Luniov, and S. A. Fedosov p. 1263 abstract
Numerical Simulation of Evolution of ElectronHole Avalanches
and Streamers in Silicon in a Uniform Electric Field
A. S. Kyuregyan p. 1266 abstract
Heat-Transfer Phenomena in Alloys
S. A. Aliev, R. I. Selim-zade, and S. S. Ragimov p. 1275 abstract
On the Nature of Charge Carrier Scattering in Ag2Se at Low Temperatures
M. B. Jafarov p. 1280 abstract
Repetition of the Shape of the Ultrafast Self-Modulation
of the Optical Absorption Spectrum upon Varying the Energy of Pulse of GaAs Pumping
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, and A. N. Krivonosov p. 1285 abstract
Spontaneous Emission of Holes Excited by an Electric Field in Germanium
Ya. E. Pokrovskii and N. A. Khvalkovskii p. 1289 abstract
Semiconductor Structures, Interfaces, and Surfaces
Differential Capacitance of a Semiconductor Film
D. E. Tsurikov and A. M. Yafyasov p. 1292 abstract
Quantum Model of Electron Accumulation at Charged Boundaries
of Heavily Doped Semiconductor Films
V. A. Gergel and A. V. Verhovtseva p. 1297 abstract
Low-Dimensional Systems
Mixing of Hole States in GaAs/AlAs(110) Heterostructures
V. N. Chernyshov p. 1301 abstract
Analysis of Mechanisms of Carrier Emission
in the pin Structures with In(Ga)As Quantum Dots
E. S. Shatalina, S. A. Blokhin, A. M. Nadtochy, A. S. Payusov, A. V. Savelyev,
M. V. Maximov, A. E. Zhukov, N. N. Ledentsov, A. R. Kovsh,
S. S. Mikhrin, and V. M. Ustinov p. 1308 abstract
Quantum Wells on 3C-SiC/NH-SiC Heterojunctions.
Calculation of Spontaneous Polarization and Electric Field Strength in Experiments
I. S. Sbruev and S. B. Sbruev p.1313 abstract
Simulation of Relaxation Times and Energy Spectra of the CdTe/Hg1xCdxTe/CdTe
Quantum Well for Variable Valence Band Offset, Well Width, and Composition x
E. O. Melezhik, J. V. Gumenjuk-Sichevska, and F. F. Sizov p. 1321 abstract
Quantum Spin Hall Effect in Nanostructures Based on Cadmium Fluoride
N. T. Bagraev, O. N. Guimbitskaya, L. E. Klyachkin, A. A. Koudryavtsev,
A. M. Malyarenko, V. V. Romanov, A. I. Ryskin, and A. S. Shcheulin p. 1328 abstract
Formation of Composite InGaN/GaN/InAlN Quantum Dots
A. F. Tsatsulnikov, E. E. Zavarin, N. V. Kryzhanovskaya, W. V. Lundin,
A. V. Saharov, S. O. Usov, P. N. Brunkov, V. V. Goncharov,
N. A. Cherkashin, and M. Hytch p. 1338 abstract
Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites
The Effect of the Dynamic Adsorption Mode on Impedance
of Composite Structures with Porous Silicon
A. Yu. Karlach, G. V. Kuznetsov, S. V. Litvinenko,
Yu. S. Milovanov, and V. A. Skryshevsky p. 1342 abstract
The Structure and Optical Properties of Nanocrytalline Lead Sulfide Films
S. I. Sadovnikov, N. S. Kozhevnikova, and A. A. Rempel p. 1349 abstract
Physics of Semiconductor Devices
A Single-Spatial-Mode Semiconductor Laser Based
on InAs/InGaAs Quantum Dots with a Diffraction Filter of Optical Modes
N. Yu. Gordeev, I. I. Novikov, A. M. Kuznetsov, Yu. M. Shernyakov, M. V. Maximov,
A. E. Zhukov, A. V. Chunareva, A. S. Payusov, D. A. Livshits, and A. R. Kovsh p. 1357 abstract
Recombination of Charge Carriers in the GaAs-Based pin Diode
G. I. Ayzenshtat, A. Y. Yushenko, S. M. Gushchin, D. V. Dmitriev,
K. S. Zhuravlev, and A. I. Toropov p. 1362 abstract
The Temperature Dependence of Internal Optical Losses
in Semiconductor Lasers ( = 900920 nm)
N. A. Pikhtin, S. O. Slipchenko, I. S. Shashkin, M. A. Ladugin,
A. A. Marmalyuk, A. A. Podoskin, and I. S. Tarasov p. 1365 abstract
Temperature Dependence of the Threshold Current Density
and External Differential Quantum Efficiency of Semiconductor Lasers ( = 900920 nm)
M. A. Ladugin, A. V. Lyutetskiy, A. A. Marmalyuk, A. A. Padalitsa, N. A. Pikhtin,
A. A. Podoskin, N. A. Rudova, S. O. Slipchenko, I. S. Shashkin,
A. D. Bondarev, and I. S. Tarasov p. 1370 abstract
Open-Circuit Voltage, Fill Factor, and Efficiency of a CdS/CdTe Solar Cell
L. A. Kosyachenko^ and E. V. Grushko p. 1375 abstract
Fabrication, Treatment, and Testing of Materials and Structures
Dependence of the Growth Rate of an AlN Layer on Nitrogen Pressure
in a Reactor for Sublimation Growth of AlN Crystals
A. A. Wolfson and E. N. Mokhov p. 1383 abstract
Crystalline Quality Improvement in Silicon Films on Sapphire
Using Recrystallization from the SiliconSapphire Interface
P. A. Alexandrov, K. D. Demakov, S. G. Shemardov, and Yu. Yu. Kuznetsov p. 1386 abstract
Electrical Characteristics of Multigraphene Films Grown
on High-Resistivity Silicon Carbide Substrates
A. A. Lebedev, A. M. Strelchuk, D. V. Shamshur, G. A. Oganesyan,
S. P. Lebedev, M. G. Mynbaeva, and A. V. Sadokhin p.1389 abstract
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