Contents

Physics of the Solid State

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Vol. 66, No. 6, 2024

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Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In_0.17Al_0.83N/GaN High-Electron-Mobility Transistor

Abdelmalek Douara, Abdelaziz Rabehi, Mawloud Guermoui, Rania Daha, and Imad Eddine Tibermacine p. 157  abstract

Microstructural, Morphological, and Magnetic Features of the Triple Perovskite Oxide La₃Mn₂FeO₉

Raghad K. Aljurays, and Aicha Loucif p. 165  abstract

Production and Characterization of Zn_{1 – x}Fe_xS Thin Films by Ultrasonic Chemical Spray Deposition Technique

Tuba Solakyildirim, and Umit Alver p. 169  abstract

Theoretical Calculation of the Structural, Electronic, and Magnetic Properties of a New Rare-Earth Based Full Heusler Alloys Pr₂CoZ (Z = Al, Ga, In)

S. Rouag, and D. Amari p. 176  abstract

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