Contents
Physics of Solid State


Vol. 47, No. 1, 2005

Simultaneous English language translation of the journal is available from Pleiades Publishing, Inc.
Distributed worldwide by the American Institute of Physics. Physics of the Solid State ISSN 1063-7834.


Proceedings of the Conference “Nanophotonics 2004”
(Nizhni Novgorod, Russia, May 2–6, 2004)

Structure, Impurity Composition, and Photoluminescence of Mechanically Polished Layers
of Single-Crystal Silicon

R. I. Batalov, R. M. Bayazitov, N. M. Khusnullin, E. I. Terukov, V. Kh. Kudoyarova,
G. N. Mosina, B. A. Andreev, and D. I. Kryzhkov
p. 1  abstract

Oxygen-Induced Modification of Dislocation Luminescence Centers in Silicon

E. A. Steinman p. 5  abstract

Excitation and De-excitation Cross Sections for Light-Emitting Nanoclusters
in Rare Earth–Doped Silicon

S. A. Krivelevich, M. I. Makoviframe0chuk, and R. V. Selyukov p. 9  abstract

Effect of Coalescence and of the Character of the Initial Oxide on the Photoluminescence
of Ion-Synthesized Si Nanocrystals in SiO2

D. I. Tetelbaum, O. N. Gorshkov, A. P. Kasatkin, A. N. Mikhaframe1lov, A. I. Belov,
D. M. Gaponova, and S. V. Morozov
p. 13  abstract

Photoluminescence of Nanocrystalline Silicon Formed by Rare-Gas Ion Implantation

A. A. Ezhevskiframe2, M. Yu. Lebedev, and S. V. Morozov p. 18  abstract

Photoelectric Properties and Electroluminescence of pin Diodes Based on GeSi/Si
Heterostructures with Self-Assembled Nanoclusters

G. A. Maksimov, Z. F. Krasil’nik, D. O. Filatov, M. V. Kruglova, S. V. Morozov,
D. Yu. Remizov, D. E. Nikolichev, and V. G. Shengurov
p. 22  abstract

Influence of a Predeposited Si1–xGex Layer on the Growth of Self-Assembled
SiGe/Si(001) Islands

N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil’nik, D. N. Lobanov, A. V. Novikov,
A. N. Yablonskiframe3, M. Stoffel, U. Denker, O. G. Schmidt, O. M. Gorbenko,
and I. P. Soshnikov
p. 26  abstract

Photoconductivity of Si/Ge/SiOx and Si/Ge/Si Structures with Germanium Quantum Dots

O. A. Shegai, A. Yu. Berezovsky, A. I. Nikiforov, and V. V. Ul’yanov p. 30  abstract

Ge/Si Photodiodes and Phototransistors with Embedded Arrays of Germanium
Quantum Dots for Fiber-Optic Communication Lines

A. I. Yakimov, A. V. Dvurechenskiframe4, V. V. Kirienko, and A. I. Nikiforov p. 34  abstract

Influence of the Germanium Deposition Rate on the Growth and Photoluminescence
of Ge(Si)/Si(001) Self-Assembled Islands

N. V. Vostokov, Z. F. Krasil’nik, D. N. Lobanov, A. V. Novikov, M. V. Shaleev,
and A. N. Yablonsky
p. 38  abstract

Si1–xGex /Si(001) Relaxed Buffer Layers Grown by Chemical Vapor Deposition
at Atmospheric Pressure

N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil’nik, O. A. Kuznetsov, A. V. Novikov,
V. A. Perevoshchikov, and M. V. Shaleev
p. 42  abstract

Negative Photoconductivity of Selectively Doped SiGe/Si : B Heterostructures
with a Two-Dimensional Hole Gas in the Middle-Infrared Range

A. V. Antonov, V. Ya. Aleshkin, V. I. Gavrilenko, Z. F. Krasil’nik, A. V. Novikov,
E. A. Uskova, and M. V. Shaleev
p. 46  abstract

Galvanomagnetic Study of the Quantum-Well Valence Band of Germanium
in the Ge1–xSix /Ge/Ge1–xSix Potential Well

M. V. Yakunin, G. A. Al’shanskiframe5, Yu. G. Arapov, V. N. Neverov, G. I. Harus,
N. G. Shelushinina, O. A. Kuznetsov, A. de Visser, and L. Ponomarenko
p. 49  abstract

Raman Spectroscopy and Electroreflectance Studies of Self-Assembled SiGe
Nanoislands Grown at Various Temperatures

M. Ya. Valakh, R. Yu. Holiney, V. N. Dzhagan, Z. F. Krasil’nik, O. S. Lytvyn,
D. N. Lobanov, A. G. Milekhin, A. I. Nikiforov, A. V. Novikov, O. P. Pchelyakov,
and V. A. Yukhymchuk
p. 54  abstract

Influence of Antimony on the Morphology and Properties of an Array of Ge/Si(100)
Quantum Dots

G. E. Cirlin, A. A. Tonkikh, V. E. Ptitsyn, V. G. Dubrovskiframe6, S. A. Masalov, V. P. Evtikhiev,
D. V. Denisov, V. M. Ustinov, and P. Werner
p. 58  abstract

Si–Ge–GaAs Nanoheterostructures for Photovoltaic Cells

O. P. Pchelyakov, A. V. Dvurechenskiframe7, A. I. Nikiforov, N. A. Pakhanov, L. V. Sokolov,
S. I. Chikichev, and A. I. Yakimov
p. 63  abstract

Formation of Ultrasmall Germanium Nanoislands with a High Density on an Atomically
Clean Surface of Silicon Oxide

A. I. Nikiforov, V. V. Ul’yanov, O. P. Pchelyakov, S. A. Teys, and A. K. Gutakovsky p. 67  abstract

Morphological Transformation of a Germanium Layer Grown on a Silicon Surface
by Molecular-Beam Epitaxy at Low Temperatures

T. M. Burbaev, V. A. Kurbatov, M. M. Rzaev, A. O. Pogosov, N. N. Sibel’din,
V. A. Tsvetkov, H. Lichtenberger, F. Schäffler, J. P. Leitao, N. A. Sobolev, and M. C. Carmo
p. 71  abstract

Shallow Acceptor Levels in Ge/GeSi Heterostructures with Quantum Wells in a Magnetic Field

V. Ya. Aleshkin, A. V. Antonov, D. B. Veksler, V. I. Gavrilenko, I. V. Erofeeva,
A. V. Ikonnikov, D. V. Kozlov, O. A. Kuznetsov, and K. E. Spirin
p. 76  abstract

Photoluminescence of Germanium Quantum Dots Grown in Silicon on a SiO2 Submonolayer

T. S. Shamirzaev, M. S. Seksenbaev, K. S. Zhuravlev, A. I. Nikiforov, V. V. Ul’yanov,
and O. P. Pchelyakov
p. 82  abstract

Erbium Photoluminescence Excitation Spectroscopy in Si : Er Epitaxial Structures

B. A. Andreev, Z. F. Krasil’nik, A. N. Yablonsky, V. P. Kuznetsov, T. Gregorkiewicz,
and M. A. J. Klik
p. 86  abstract

Heteroepitaxy of Erbium-Doped Silicon Layers on Sapphire Substrates

V. G. Shengurov, D. A. Pavlov, S. P. Svetlov, V. Yu. Chalkov, P. A. Shilyaev,
M. V. Stepikhova, L. V. Krasil’nikova, Yu. N. Drozdov, and Z. F. Krasil’nik
p. 89  abstract

Analysis of the Gain and Luminescence Properties of Si/Si1–xGex : Er/Si Heterostructures
Produced by Sublimation Molecular-Beam Epitaxy in a Gas Phase

L. V. Krasil’nikova, M. V. Stepikhova, Yu. N. Drozdov, M. N. Drozdov, Z. F. Krasil’nik,
V. G. Shengurov, V. Yu. Chalkov, S. P. Svetlov, and O. B. Gusev
p. 93  abstract

Effective Excitation Cross Section and Lifetime of Er3+ Ions in Si : Er Light-Emitting Diodes
Fabricated by Sublimation Molecular-Beam Epitaxy

D. Yu. Remizov, V. B. Shmagin, A. V. Antonov, V. P. Kuznetsov, and Z. F. Krasil’nik p. 98  abstract

Crystal Lattice Defects and Hall Mobility of Electrons in Si : Er/ Si Layers Grown
by Sublimation Molecular-Beam Epitaxy

V. P. Kuznetsov, R. A. Rubtsova, V. N. Shabanov, A. P. Kasatkin, S. V. Sedova,
G. A. Maksimov, Z. F. Krasil’nik, and E. V. Demidov
p. 102  abstract

Effect of Nonuniform Permittivity of a Solid-State Matrix on the Spectral Width
of Erbium Ion Luminescence

S. A. Teterukov, M. G. Lisachenko, O. A. Shalygina, D. M. Zhigunov,
V. Yu. Timoshenko, and P. K. Kashkarov
p. 106  abstract

Erbium Excitation in a SiO2: Si-nc Matrix under Pulsed Pumping

O. B. Gusev, M. Wojdak, M. Klik, M. Forcales, and T. Gregorkiewicz p. 110  abstract

MBE-Grown Si : Er Light-Emitting Structures: Effect of Epitaxial Growth Conditions
on Impurity Concentration and Photoluminescence

N. A. Sobolev, D. V. Denisov, A. M. Emel’yanov, E. I. Shek, B. Ya. Ber, A. P. Kovarskiframe8,
V. I. Sakharov, I. T. Serenkov, V. M. Ustinov, G. E. Cirlin, and T. V. Kotereva
p. 113  abstract

MBE-Grown Si : Er Light-Emitting Structures: Effect of Implantation and Annealing
on the Luminescence Properties

N. A. Sobolev, D. V. Denisov, A. M. Emel’yanov, E. I. Shek, and E. O. Parshin p. 117  abstract

Erbium Ion Luminescence of Silicon Nanocrystal Layers in a Silicon Dioxide Matrix
Measured under Strong Optical Excitation

V. Yu. Timoshenko, O. A. Shalygina, M. G. Lisachenko, D. M. Zhigunov, S. A. Teterukov,
P. K. Kashkarov, D. Kovalev, M. Zacharias, K. Imakita, and M. Fujii
p. 121  abstract

Er3+ Ion Electroluminescence of p+frame9Si/nframe10Si : Er/n+frame11Si Diode Structure under Breakdown Conditions

V. B. Shmagin, D. Yu. Remizov, S. V. Obolenskiframe12, D. I. Kryzhkov, M. N. Drozdov,
and Z. F. Krasil’nik
p. 125  abstract

Novel Polymer Nanocomposites with Giant Dynamical Optical Nonlinearity

I. V. Yurasova, O. L. Antipov, N. L. Ermolaev, V. K. Cherkasov, T. I. Lopatina,
S. A. Chesnokov, and I. G. Ilyina
p. 129  abstract

Effect of Roughness of Two-Dimensional Heterostructures on Weak Localization

A. V. Germanenko, G. M. Min’kov, O. É. Rut, V. A. Larionova, B. N. Zvonkov,
V. I. Shashkin, O. I. Khrykin, and D. O. Filatov
p. 133  abstract

Properties of Magnesium Silicate Doped with Chromium in Porous Silicon

E. S. Demidov, V. V. Karzanov, N. E. Demidova, I. S. Belorunova, O. N. Gorshkov,
M. V. Stepikhova, and A. M. Sharonov
p. 141  abstract

Waveguide Plasmon Polaritons in Metal–Dielectric Photonic Crystal Slabs

N. A. Gippius, S. G. Tikhodeev, A. Christ, J. Kuhl, and H. Giessen p. 145  abstract

Ferroelectric Photonic Crystals Based on Nanostructured Lead Zirconate Titanate

F. Yu. Sychev, T. V. Murzina, E. M. Kim, and O. A. Aktsipetrov p. 150  abstract

Magnetization-Induced Third-Harmonic Generation in Nanostructures and Thin Films

T. V. Murzina, E. M. Kim, R. V. Kapra, O. A. Aktsipetrov, M. V. Ivanchenko,
V. G. Lifshits, S. V. Kuznetsova, and A. F. Kravets
p. 153  abstract

Anisotropic Photonic Crystals and Microcavities Based on Mesoporous Silicon

O. A. Aktsipetrov, T. V. Dolgova, I. V. Soboleva, and A. A. Fedyanin p. 156  abstract

Methods for Increasing the Efficiency of Nonlinear Optical Interactions
in Nanostructured Semiconductors

P. K. Kashkarov, L. A. Golovan, S. V. Zabotnov, V. A. Mel’nikov, E. Yu. Krutkova,
S. O. Konorov, A. B. Fedotov, K. P. Bestem’yanov, V. M. Gordienko, V. Yu. Timoshenko,
A. M. Zheltikov, G. I. Petrov, and V. V. Yakovlev
p. 159  abstract

Recombination at Mixed-Valence Impurity Centers in PbTe(Ga) Epitaxial Layers

B. A. Akimov, V. A. Bogoyavlenskiframe13, V. A. Vasil’kov, L. I. Ryabova, and D. R. Khokhlov p. 166  abstract

Luminescence of Phthalocyanine Thin Films

G. L. Pakhomov, D. M. Gaponova, A. Yu. Luk’yanov, and E. S. Leonov p. 170  abstract

Temperature Dependence of the Photoluminescence of CdTe/ZnTe Quantum-Dot Superlattices

V. S. Bagaev and E. E. Onishchenko p. 174  abstract

Total Resonant Absorption of Light by Plasmons on the Nanoporous Surface of a Metal

T. V. Teperik, V. V. Popov, and F. J. García de Abajo p. 178  abstract


Magnetism and Ferroelectricity

Acoustic Properties of Glycine Phosphite Crystals with an Admixture of Glycine Phosphate

E. V. Balashova, V. V. Lemanov , and G. A. Pankova p. 183  abstract


Fullerenes and Atomic Clusters

A New Allotropic Form of Carbon [C28]n Based on Fullerene C20 and Cubic Cluster C8
and Si and Ge Analogs of This Form: Computer Simulation

A. L. Chistyakov, I. V. Stankevich, and A. A. Korlyukov p. 191  abstract


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