nman, V. I. Vdovin, A. N. Izotov, Yu. N. Parkhomenko, and A. F. Borun p. 22 abstract
Contents
Physics of Solid State
Vol. 46, No. 1, 2004
Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Physics of the Solid State ISSN 1063-7834.
Oleg Vladimirovich Losev: Pioneer of Semiconductor Electronics
(Celebrating One Hundred Years since His Birth)
M. A. Novikov p. 1
Proceedings of the Conference Dedicated to O. V. Losev (1903–1942)
(Nizhni Novgorod, Russia, March 17–20, 2003)
Electroluminescence Efficiency of Silicon Diodes
M. S. Bresler, O. B. Gusev, B. P. Zakharchenya, and I. N. Yassievich p. 5 abstract
Structural and Photoluminescence Properties of Heteroepitaxial Silicon-on-Sapphire Layers
S. P. Svetlov, V. Yu. Chalkov, V. G. Shengurov, Yu. N. Drozdov, Z. F. Krasil’nik,
L. V. Krasil’nikova, M. V. Stepikhova, D. A. Pavlov, T. V. Pavlova, P. A. Shilyaev,
.and A. F. Khokhlov† p. 10 abstract
Edge Electroluminescence of Silicon: An Amorphous-Silicon–Crystalline-Silicon Heterostructure
M. S. Bresler, O. B. Gusev, E. I. Terukov, A. Froitzheim, and W. Fuhs p. 13 abstract
The Influence of P+, B+, and N+ Ion Implantation on the Luminescence Properties
of the SiO2 : nc-Si System
D. I. Tetelbaum, O. N. Gorshkov, V. A. Burdov, S. A. Trushin, A. N. Mikhaylov,
D. M. Gaponova, S. V. Morozov, and A. I. Kovalev p. 17 abstract
Photoluminescence and Structural Defects in Silicon Layers Implanted by Iron Ions
É. A. Shte
Phonon-Assisted Radiative Electron–Hole Recombination in Silicon Quantum Dots
V. A. Belyakov, V. A. Burdov, D. M. Gaponova, A. N. Mikhaylov, D. I. Tetelbaum,
and S. A. Trushin p. 27 abstract
Formation of Two-Dimensional Photonic-Crystal Structures in Silicon
for Near-Infrared Region Using Fine Focused Ion Beams
A. F. Vyatkin, E. Yu. Gavrilin, Yu. B. Gorbatov, V. V. Starkov, and V. V. Sirotkin p. 32 abstract
Effect of the Postimplantation-Annealing Temperature on the Properties of Silicon
Light-Emitting Diodes Fabricated through Boron Ion Implantation into n-Si
N. A. Sobolev, A. M. Emel’yanov, E. I. Shek, and V. I. Vdovin p. 35 abstract
Silicon LEDs Emitting in the Band-to-Band Transition Region: Effect of Temperature
and Current Strength
A. M. Emel’yanov, N. A. Sobolev, and E. I. Shek p. 40 abstract
New Mechanisms of Localization of Charge Carriers in Nanosilicon
I. V. Blonskyy, A. Yu. Vakhnin, V. N. Kadan, and A. K. Kadashchuk p. 45 abstract
Si/Ge Nanostructures for Optoelectronics Applications
V. A. Egorov, G. É. Cirlin, A. A. Tonkikh, V. G. Talalaev, A. G. Makarov,
N. N. Ledentsov, V. M. Ustinov, N. D. Zakharov, and P. Werner p. 49 abstract
Ge/Si Quantum Dots in External Electric and Magnetic Fields
A. V. Dvurechenski, A. I. Yakimov, A. V. Nenashev, and A. F. Zinov’yeva p. 56 abstract
Photoluminescence of Self-Assembled GeSi/Si(001) Nanoislands of Different Shapes
N. V. Vostokov, Z. F. Krasil’nik, D. N. Lobanov, A. V. Novikov, M. V. Shaleev,
and A. N. Yablonskip. 60 abstract
Synthesis of Ordered Ge–Si Heterostructures Containing Ultrasmall Germanium Nanoclusters
Yu. B. Bolkhovityanov, S. Ts. Krivoshchapov, A. I. Nikiforov, B. Z. Ol’shanetski,
O. P. Pchelyakov, L. V. Sokolov, and S. A. Teys p. 64 abstract
Correlation between the Energy of SiGe Nanoislands and Their Shape and Size
M. Ya. Valakh, V. N. Dzhagan, Z. F. Krasil’nik, P. M. Lytvyn, D. N. Lobanov,
E. V. Mozdor, A. V. Novikov, V. A. Yukhymchuk, and A. M. Yaremko p. 67 abstract
Photoluminescence of Si/Ge Nanostructures Grown by Molecular-Beam Epitaxy
at Low Temperatures
T. M. Burbaev, V. A. Kurbatov, A. O. Pogosov, M. M. Rzaev, N. N. Sibel’din,
and V. A. Tsvetkov p. 71 abstract
Stepwise Dependence of the Photoconductivity of Si/Ge Structures
with Quantum Dots on the Interband Illumination Intensity
O. A. Shega, V. A. Markov, and A. I. Nikiforov p. 74 abstract
Growth and Structure of Ge Nanoislands on an Atomically Clean Silicon Oxide Surface
A. I. Nikiforov, V. V. Ul’yanov, O. P. Pchelyakov, S. A. Teys, and A. K. Gutakovskip. 77 abstract
Growth of Germanium Nanoislands and Nanowires on Singular
and Vicinal Si(111) Surfaces Prior to the Formation of a Wetting Layer
S. A. Teys, A. B. Talochkin, K. N. Romanyuk, and B. Z. Olshanetsky p. 80 abstract
Composition and Elastic Stresses in Multilayer Structures with Si1–xGex Nanoislands
M. Ya. Valakh, V. N. Dzhagan, P. M. Lytvyn, V. A. Yukhymchuk, Z. F. Krasil’nik,
A. V. Novikov, and D. N. Lobanov p. 85 abstract
Self-Assembling of Ge Quantum Dots in the CaF2/Ge/CaF2/Si Heteroepitaxial System
and the Development of Tunnel-Resonance Diode on Its Basis
L. V. Sokolov, A. S. Deryabin, A. I. Yakimov, O. P. Pchelyakov, and A. V. Dvurechenskip. 89 abstract
Resonant Raman Scattering by Strained and Relaxed Germanium Quantum Dots
A. G. Milekhin, A. I. Nikiforov, M. Yu. Ladanov, O. P. Pchelyakov, S. Schulze,
and D. R. T. Zahn p. 92 abstract
Er3+ Photoluminescence Excitation Spectra in Erbium-Doped Epitaxial Silicon Structures
B. A. Andreev, Z. F. Krasil’nik, D. I. Kryzhkov, A. N. Yablonski,
V. P. Kuznetsov, T. Gregorkiewicz, and M. A. J. Klik p. 97 abstract
Effect of Growth Conditions on Photoluminescence of Erbium-Doped Silicon
Layers Grown Using Sublimation Molecular-Beam Epitaxy
V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, B. A. Andreev, Z. F. Krasil’nik,
and D. I. Kryzhkov p. 101 abstract
High-Efficiency Erbium Ion Luminescence in Silicon Nanocrystal Systems
P. K. Kashkarov, B. V. Kamenev, M. G. Lisachenko, O. A. Shalygina,
V. Yu. Timoshenko, M. Schmidt, J. Heitmann, and M. Zacharias p. 104 abstract
Effect of the p–n Junction Breakdown Mechanism on the Er3+ Ion Electroluminescence
Intensity and Excitation Efficiency in Si : Er Epitaxial Layers Grown through Sublimation
Molecular Beam Epitaxy
V. B. Shmagin, D. Yu. Remizov, Z. F. Krasil’nik, V. P. Kuznetsov, V. N. Shabanov,
L. V. Krasil’nikova, D. I. Kryzhkov, and M. N. Drozdov p. 109 abstract
The Role of Microstructure in Luminescent Properties of Er-doped Nanocrystalline Si Thin Films
M. V. Stepikhova, M. F. Cerqueira, M. Losurdo, M. M. Giangregorio,
E. Alves, T. Monteiro, and M. J. Soares p. 113 abstract
Intraband Absorption and Emission of Light in Quantum Wells and Quantum Dots
L. E. Vorob’ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov, V. A. Shalygin,
S. Hanna, A. Seilmeier, Kh. Moumanis, F. Julien, A. E. Zhukov, and V. M. Ustinov p. 118 abstract
Photoconductivity of Lead Telluride-Based Doped Alloys in the Submillimeter
Wavelength Range
K. G. Kristovski, A. E. Kozhanov, D. E. Dolzhenko, I. I. Ivanchik, D. Watson,
and D. R. Khokhlov p. 122 abstract
Shallow-Impurity-Assisted Transitions in the Course of Submillimeter Magnetoabsorption
of Strained Ge/GeSi(111) Quantum-Well Heterostructures
V. Ya. Aleshkin, D. B. Veksler, V. I. Gavrilenko, I. V. Erofeeva, A. V. Ikonnikov,
D. V. Kozlov, and O. A. Kuznetsov p. 125 abstract
Intersubband Cyclotron Resonance of Holes in Strained Ge/GeSi(111) Heterostructures
with Germanium Wide Quantum Wells and Cyclotron Resonance of 1L Electrons
in GeSi Layers
V. Ya. Aleshkin, D. B. Veksler, V. I. Gavrilenko, I. V. Erofeeva, A. V. Ikonnikov,
D. V. Kozlov, and O. A. Kuznetsov p. 130 abstract
Magnetotransport Characterization of THz Detectors Based on Plasma Oscillations
in Submicron Field-Effect Transistors
J. Lusakowski, W. Knap, N. Dyakonova, E. Kaminska, A. Piotrowska, K. Golaszewska,
M. S. Shur, D. Smirnov, V. Gavrilenko, A. Antonov, and S. Morozov p. 138 abstract
Electron Transport and Terahertz Radiation Detection in Submicrometer-Sized GaAs/AlGaAs
Field-Effect Transistors with Two-Dimensional Electron Gas
A. V. Antonov, V. I. Gavrilenko, E. V. Demidov, S. V. Morozov, A. A. Dubinov,
J. Lusakowski, W. Knap, N. Dyakonova, E. Kaminska, A. Piotrowska,
K. Golaszewska, and M. S. Shur p. 146 abstract
Cyclotron Resonance of Holes in Silicon in Quantizing Magnetic Fields
D. B. Veksler, V. I. Gavrilenko, and K. E. Spirin p. 150 abstract
Plasmon-Induced Terahertz Absorption and Photoconductivity in a Grid-Gated
Double-Quantum-Well Structure
V. V. Popov, T. V. Teperik, O. V. Polischuk, X. G. Peralta, S. J. Allen,
N. J. M. Horing, and M. C. Wanke p. 153 abstract
Destruction and Stabilization of the Electromagnetic Transparency of a Semiconductor Superlattice
Yu. A. Romanov and Yu. Yu. Romanova p. 157 abstract
On a Superlattice Bloch Oscillator
Yu. A. Romanov and Yu. Yu. Romanova p. 164 abstract
Bose Condensation of Interwell Excitons in Lateral Traps: A Phase Diagram
A. A. Dremin, A. V. Larionov, and V. B. Timofeev p. 170 abstract
Electronic States and Vibration Spectra of CdTe/ZnTe Quantum-Dot Superlattices
V. S. Bagaev, L. K. Vodop’yanov, V. S. Vinogradov, V. V. Zatsev, S. P. Kozyrev,
N. N. Mel’nik, E. E. Onishchenko, and G. Karczewski p. 173 abstract
Resonant Stokes and Anti-Stokes Raman Scattering of Light in CdSe/ZnSe Nanostructures
M. Ya. Valakh, V. V. Strelchuk, G. N. Semenova, and Yu. G. Sadofyev p. 176 abstract
Semiconductors and Dielectrics
The Influence of Hydrostatic Pressure on the Static and Dynamic Properties
of an InSe Crystal: A First-Principles Study
K. Z. Rushchanskip. 179 abstract
Magnetism and Ferroelectricity
Temperature Dependences of the Dielectric Properties of Lithium–Titanium Ferrite Ceramics
A. V. Malyshev, V. V. Peshev, and A. M. Pritulov p. 188 abstract
Errata
Erratum: “Phase Separation of the Spin System in the La0.93Sr0.07MnO3 Crystal”
[Phys. Solid State 45 (12), 2297 (2003)]
S. F. Dubunin, V. E. Arkhipov, S. G. Teploukhov, V. D. Parkhomenko,
N. N. Loshkareva, and N. I. Solin p. 192
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