Contents
Crystallography Reports

Vol. 47, Suppl. 1, 2002

The supplement is published only in English by MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Crystallography Reports ISSN 1063-7745.

Preface p. 1

Crystals of the Future

Semiconductor Silicon at the Threshold of Twenty-First Century

M. G. Mil’vidsky p. 3  abstract

Crystals for Photonics

T. T. Basiev, E. V. Zharikov, and V. V. Osiko p. 15  abstract

Melt Growth

Fundamentals of High-Temperature Crystallization

Kh. S. Bagdasarov p. 27  abstract

Development of Shaping Technologies for Crystals Grown from Melts

V. A. Borodin and Yu. A. Osipyan p. 35  abstract

New Advances and Developments in the Stepanov Method for the Growth
of Shaped Crystals

P. I. Antonov and V. N. Kurlov p. 43  abstract

Growth of Oxide Fibers by the Internal Crystallization Method

V. N. Kurlov, S. T. Mileko, A. A. Kolchin, M. Yu. Starostin, and V. M. Kiko p. 53  abstract

Chemical Aspects of Crystal Growth of Multicomponent Fluoride Materials
from the Melt

B. P. Sobolev p. 63  abstract

Solution Growth

Characterization of Defects Generated by Di- and Trivalent Cations
in the Potassium-Dihydrophosphate Structure and Their Influence on Growth Kinetics
and Face Morphology

T. A. Eremina, N. N. Eremin, V. A. Kuznetsov, T. M. Okhrimenko, N. G. Furmanova,
E. P. Efremova, and V. S. Urusov p. 76  abstract

Mechanism of Growth of ZnO Single Crystals from Hydrothermal Alkali Solutions

L. N. Demianets, D. V. Kostomarov, I. P. Kuz’mina, and S. V. Pushko p. 86  abstract

Growth and Properties of Nb- or Sn-Doped KTiOPO₄ Crystals

V. K. Yanovski, V. I. Voronkova, T. Yu. Losevskaya, S. Yu. Stefanovich, S. A. Ivanov,
V. I. Simonov, and N. I. Sorokina p. 99  abstract

Nucleation Kinetics at Strong Supersaturation

I. L. Maksimov p. 105  abstract

On the Equilibrium Crystal Habit as Predicted by the Gibbs–Curie Principle

E. B. Trevus p. 116  abstract

Real Structure of Crystals. Growth of Films. Nanocrystals. Tip Structures

Low-Temperature Molecular Beam Epitaxy of GaAs: Influence of Crystallization Conditions
on Structure and Properties of Layers

L. G. Lavrent’eva, M. D. Vilisova, V. V. Preobrazhenski, and V.V. Chaldyshev p. 118  abstract

Real Structures of Doped Lead Telluride Crystals

V. P. Zlomanov, T. A. Kuznetsova, S. G. Dorofeev, V. D. Volodin, and O. I. Tananaeva p. 128  abstract

Perfection and Homogeneity of Space-Grown GaSb:Te Crystals

A. E. Voloshin, T. Nishinaga, and P. Ge p. 136  abstract

Atomic Force Microscopy Study of Lysozyme Crystallization

I. V. Yaminsky, N. V. Gvozdev, M. I. Sil’nikova, and L. N. Rashkovich p. 149  abstract

Nucleation and Growth of Crystalline Diamond Particles on Silicon Tips

E. I. Givargizov, A. N. Stepanova, L. L. Aksenova, E. V. Rakova, J. L. Hatchison,
N. A. Kiselev, E. S. Mashkova, and V. A. Molchanov^† p. 159  abstract

Growth of a Si Nanocrystal in an Oxygen Atmosphere. Computer Simulation

A. E. Galashev p. 169  abstract

Epitaxy of CdS and PbS on Langmuir Layers

E. V. Rakova, V. V. Klechkovskaya, N. D. Stepina, and L. A. Fegin p. 177  abstract

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