Vol. 63, No. 3, 2018

Journal of Communications Technology and Electronics

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Journal of Communications Technology and Electronics ISSN 1064-2269.

Electrodynamics and Wave Propagation

Plasmons in Chains of Spherical Nanoparticles with the Account of All Pairwise Interactions

A. M. Pikalov, A. V. Dorofeenko, A. B. Granovsky and Yu. E. Lozovik p. 189 abstract

Theory and Methods of Signal Processing

On Terms and Definitions in Radio Navigation

A. A. Povalyaev p. 198 abstract

Recovery of Images Distorted by an Instrument Function with Unknown Side Lobes

V. A. Cherepenin, A. V. Kokoshkin, V. A. Korotkov, K. V. Korotkov and E. P. Novichikhin p. 212 abstract

Range Observation Method Applied to Linear Frequency-Modulated Continuous-Wave Synthetic-Aperture Radars

Zh. T. Erdyneev, G. Babur and A. A. Geltser p. 220 abstract

Radio Phenomena in Solids and Plasma

Self-Detection of High-Frequency Mechanical Oscillations of Whiskers in Quasi-1D Conductors with Charge-Density Wave

M. V. Nikitin, V. Ya. Pokrovskii, S. G. Zybtsev, A. M. Zhikharev and P. V. Lega p. 226 abstract

Microwave Electronics

On the Possibility of Expanding the Dynamic Range of Broadband High-Frequency Receivers

S. V. Gutenko, S. A. Petrov, Yu. A. Fedonin, P. V. Kupriyanov and A. V. Androsov p. 235 abstract

Electron and Ion Emission

New Type of the Electron Emission Induced by the Electric Field

M. A. Polyakov and G. N. Fursey p. 239 abstract

Nanoelectronics

Ideal Quantum Wires in a Magnetic Field: Self-Organization Energy, Critical Sizes, and Controllable Conductivity

A. M. Mandel’, V. B. Oshurko, G. I. Solomakho and K. G. Solomakho p. 245 abstract

Physical Processes in Electron Devices

Influence of Geometric Parameters and Permittivity of Stripline Filters on Resonator Coupling Coefficients

A. V. Zakharov p. 254 abstract

Malfunctioning of Microcontroller Irradiated with Ultrashort Ultrabroadband Pulse Trains

A. P. Stepovik, E. Yu. Shamaev, D. V. Khmel’nitskii, M. M. Armanov, A. A. Kondrat’ev, I. A. Sorokin and E. V. Zavolokov p. 264 abstract

Novel Radio Systems and Elements

Measurement and Simulation of Time Response of Printed Modal Filters with Broad-Side Coupling

A. T. Gazizov, A. M. Zabolotskii and T. R. Gazizov p. 270 abstract

Influence of Indirect Transitions on Optical Characteristics of A₃B₅ Heteroepitaxial Layers

A. V. Nikonov and N. I. Iakovleva p. 277 abstract

Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg_1 – xCd_xTe (x = 0.22–0.23) with the Al₂O₃ Insulator

A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, V. V. Vasil’ev, V. S. Varavin, S. A. Dvoretsky, N. N. Mikhailov, M. V. Yakushev and G. Yu. Sidorov p. 281 abstract

Long-Term Stability of a 640 × 512 InSb Focal Plane Array with a Pitch of 15 μm

P. V. Vlasov p. 285 abstract

Contactless Measurement of Electron Concentration in Undoped Homoepitaxial InSb Layers

O. S. Komkov, D. D. Firsov, T. V. Lvova, I. V. Sedova, V. A. Solov’ev, A. N. Semenov and S. V. Ivanov p. 289 abstract

Scanning Thermal Imaging Device Based on a Domestic Photodetector Device

I. I. Kremis, V. S. Kalinin, V. N. Fedorinin, Yu. M. Korsakov and K. P. Shatunov p. 292 abstract

InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3–5 µm

A. L. Dudin, N. I. Katsavets, D. M. Krasovitsky, S. V. Kokin, V. P. Chaly and I. V. Shukov p. 296 abstract

Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 × 288 Elements

K. O. Boltar, I. D. Burlakov, P. V. Vlasov, A. A. Lopukhin, V. P. Chaliy and N. I. Katsavets p. 300 abstract

Precision Etching of Thin Doped Silicon Layers

A. Yu. Borovkova, T. N. Grischina and E. S. Matyuhina p. 303 abstract

Methods for Calculation and Control of the Impurity Difference Dose in Avalanche InGaAs/InP Structures

A. K. Budtolaev, N. V. Kravchenko, P. E. Khakuashev and I. V. Chinareva p. 306 abstract

Analysis of Misorientation of Single-Crystal Blocks in the Bulk InSb Crystal

A. D. Shabrin, A. E. Goncharov, D. A. Pashkeev, A. V. Lyalikov and A. V. Egorov p. 309 abstract

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