Vol. 62, No. 3, 2017
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Journal of Communications Technology and Electronics ISSN 1064-2269.
Application of the Method of Auxiliary Sources to Study the Influence of Resonance Electromagnetic Fields on a Man in Large Spatial Domains
p. 195 abstract
Interaction of Electromagnetic Radiation with a Thin Metal Wire in the Case of a Glancing Incident Wave
p. 205 abstract
Distribution Function of the Ground Clutter and Generalization of the Westerfield Formula for Calculation of the Clutter Power in Spatially Multichannel MIMO Radar Systems
p. 212 abstract
Nonlinear Distortions Caused by Sigma‒Delta Analog-Digital Conversion of Signals
p. 219 abstract
Reconfigurable and Scalable Architecture of a System for Digital Processing of Broadband Radar Signals
p. 229 abstract
Application of the Dual-Tree Wavelet Transform for Digital Filtering of Noisy Audio Signals
p. 236 abstract
Estimation of the Time Delay of Coupling between Oscillators from Time Realizations of Oscillation Phases for Different Properties of Phase Dynamics
p. 241 abstract
Isofrequency Surfaces and Dependences of Electromagnetic Waves in Infinite Ferromagnetic Space
p. 251 abstract
On the Clinotron Effect in a Backward-Wave Tube
p. 260 abstract
Analysis of Dielectric Properties of Blood and Development of a Resonator Method for Noninvasive Measuring of Glucose Content in Blood
p. 267 abstract
Devices Based on Surface Acoustic Waves for Temperature Sensors
p. 282 abstract
Digital Frequency Synthesizer for 133Cs-Vapor Atomic Clock
p. 289 abstract
Methods for Measuring the Current–Voltage Characteristics of Photodiodes in a Multirow Infrared Photodetector
p. 294 abstract
A 1280 × 1024 CMOS Visible-Range Photodetector Chip with a Pixel Size of 13 × 13 μm
p. 299 abstract
Epitaxial Structures for InGaAs/InP Avalanche Photodiodes
p. 304 abstract
Photoelectric Characteristics of Focal Plane Arrays Based on Epitaxial Layers of Indium Antimonide Deposited on a Heavily Doped Substrate
p. 309 abstract
Analysis of the nBn-type Barrier Structures for Infrared Photodiode Detectors
p. 314 abstract
Analysis of the Spatial Distribution of the Spectral Photosensitivity of Focal Plane Arrays
p. 317 abstract
Structural Properties of Cadmium–Zinc–Tellurium Substrates for Growth of Mercury–CadmiumTellurium Solid Solutions
p. 321 abstract
Independent Operation Time of Photodetectors of the (3—5)-µm Spectral Band Based on InSb and CdHgTe Heteroepitaxial Structures
p. 326 abstract
Investigation of Spectral Dependences of the Absorption Coefficient in InGaAs Layers
p. 331 abstract