Contents
Journal of Communications Technology and Electronics
Vol. 61, No. 3, 2016
A simultaneous English language translation of this journal is available from Pleiades Publishing, Inc.
Distributed worldwide by Springer. Journal of Communications Technology and Electronics ISSN 1064-2269.
Electrodynamics and Wave Propagation
About the Choice of Auxiliary Sources During the Solution of the Problem of Diffraction
of a Point Source Field by a Dielectric Body
S. A. Manenkov p. 211 abstract
Diffraction of a Plane Wave by a Multiserial Lattice Located in a Dielectric Layer
A. G. Kurkchan, S. A. Manenkov, and E. S. Negorozhina p. 224 abstract
A Vector Model of Wave Propagation Through an Interface of Dissipative Media
V. G. Shavrov and V. I. Shcheglov p. 234 abstract
Boundary-Value Problem for the Adjoint Helmholtz Equation
A. S. Raevskii and S. B. Raevskii p. 243 abstract
Statistical Radiophysics
Amplitude-Goniometric Passive Location of an Emitting Target
in the Nonstationary Radio Channel
Yu. G. Bulychev, V. Yu. Bulychev, and S. S. Ivakina p. 246 abstract
Radio Phenomena in Solids and Plasma
Influence of the Medium Nonlinearity on the Reflection of Monochromatic and Pulsed Radiation
I. V. Zlodeev and D. I. Sementsov p. 254 abstract
Tunneling of Optical Beams in a Layered Structure with a Periodic Variation in the Refractive Index
N. A. Bobkov, V. F. Marchenko, I. G. Zakharova, and P. Yu. Shestakov p. 261 abstract
Microwave Electronics
Generation in Crossed Fields under Parametric Variation in the Magnetic Field
V. B. Baiburin and A. S. Rozov p. 267 abstract
Electron and Ion Optics
Geometrized Theory of Plane Electron Beams and Model of an Electron-Optical System
of Planar Gyrotron
V. A. Syrovoi p. 272 abstract
Novel Radio Systems and Elements
Wideband Planar Filters with an Extended Stopband
A. V. Zakharov and M. E. Ilchenko p. 291 abstract
Device for Nanoobject Manipulation Based on Two-Layer Composite with Shape Memory
V. A. Dikan, A. V. Mashirov, D. I. Zakharov, P. V. Mazaev, A. M. Zhikharev,
V. S. Kalashnikov, V. V. Koledov, S. V. von Gratovski, N. N. Sitnikov, A. V. Irzhak,
A. V. Shelyakov, and V. G. Shavrov p. 302 abstract
Articles from the Russian Journal Prikladnaya Fizika
Analytical Model Used to Calculate Focal-Plane-Array Parameters
A. I. Patrashin, I. D. Burlakov, M. D. Korneeva, and V. V. Shabarov p. 311 abstract
Short-Wavelength Infrared Array Avalanche Photodetectors on the Basis
of InGaAs Heteroepitaxial Structures
N. I. Iakovleva, K. O. Boltar, M. V. Sednev, A. I. Patrashin, and N. A. Irodov p. 319 abstract
Focal Plane Arrays Mesastructures Formation by Ion-Beam Etching
M. V. Sednev, K. O. Boltar, Yu. P. Sharonov, and A. A. Lopukhin p. 324 abstract
Influence of Parameters of the SemiconductorDielectric Interface on the Current
of the Guard Ring of Silicon Photodiodes
S. S. Demidov and E. A. Klimanov p. 328 abstract
Investigation of the Surface Roughness of CdZnTe Substrates by Different Techniques
of Nanometer Accuracy
I. D. Burlakov, I. A. Denisov, A. L. Sizov, A. A. Silina, and N. A. Smirnova p. 333 abstract
Analytical Approach to Selection of the Optimum Structure of Avalanche Heterophotodiodes
Based on Direct Bandgap Semiconductors
V. A. Kholodnov, I. D. Burlakov, and A. A. Drugova p. 338 abstract
Temperature Dependence of Diffusion Length in MCT Epitaxial Layers
I. A. Nikiforov, A. V. Nikonov, K. O. Boltar, N. I. Iakovleva p. 344 abstract
320 256 Avalanche Array Photodetector on the Basis of Ternary Alloys
of the A3B5 Group with an InGaAs Absorbing Layer and an InAlAs Barrier Layer
N. I. Iakovleva, K. O. Boltar, M. V. Sednev, A. A. Lopukhin, and E. D. Korotaev p. 348 abstract
Properties of Correlators of Thermal and Photoinduced Stochastic Fields
of Charge-Carrier Concentrations and Currents in IR Photodiodes
A. Yu. Selyakov, I. D. Burlakov, and A. M. Filachev p. 352 abstract
Characteristics of Heteroepitaxial Structures AlxGa1xN for pin Diode Focal Plane Arrays
D. V. Smirnov, K. O. Boltar, M. V. Sednev, and Yu. P. Sharonov p. 358 abstract
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