Contents
Journal of Communications Technology and Electronics


Vol. 61, No. 3, 2016

A simultaneous English language translation of this journal is available from Pleiades Publishing, Inc.
Distributed worldwide by Springer. Journal of Communications Technology and Electronics ISSN 1064-2269.


Electrodynamics and Wave Propagation

About the Choice of Auxiliary Sources During the Solution of the Problem of Diffraction
of a Point Source Field by a Dielectric Body

S. A. Manenkov p. 211  abstract

Diffraction of a Plane Wave by a Multiserial Lattice Located in a Dielectric Layer

A. G. Kurkchan, S. A. Manenkov, and E. S. Negorozhina p. 224  abstract

A Vector Model of Wave Propagation Through an Interface of Dissipative Media

V. G. Shavrov and V. I. Shcheglov p. 234  abstract

Boundary-Value Problem for the Adjoint Helmholtz Equation

A. S. Raevskii and S. B. Raevskii p. 243  abstract


Statistical Radiophysics

Amplitude-Goniometric Passive Location of an Emitting Target
in the Nonstationary Radio Channel

Yu. G. Bulychev, V. Yu. Bulychev, and S. S. Ivakina p. 246  abstract


Radio Phenomena in Solids and Plasma

Influence of the Medium Nonlinearity on the Reflection of Monochromatic and Pulsed Radiation

I. V. Zlodeev and D. I. Sementsov p. 254  abstract

Tunneling of Optical Beams in a Layered Structure with a Periodic Variation in the Refractive Index

N. A. Bobkov, V. F. Marchenko, I. G. Zakharova, and P. Yu. Shestakov p. 261  abstract


Microwave Electronics

Generation in Crossed Fields under Parametric Variation in the Magnetic Field

V. B. Baiburin and A. S. Rozov p. 267  abstract


Electron and Ion Optics

Geometrized Theory of Plane Electron Beams and Model of an Electron-Optical System
of Planar Gyrotron

V. A. Syrovoi p. 272  abstract


Novel Radio Systems and Elements

Wideband Planar Filters with an Extended Stopband

A. V. Zakharov and M. E. Il’chenko p. 291 abstract

Device for Nanoobject Manipulation Based on Two-Layer Composite with Shape Memory

V. A. Dikan, A. V. Mashirov, D. I. Zakharov, P. V. Mazaev, A. M. Zhikharev,
V. S. Kalashnikov, V. V. Koledov, S. V. von Gratovski, N. N. Sitnikov, A. V. Irzhak,
A. V. Shelyakov, and V. G. Shavrov
p. 302  abstract


Articles from the Russian Journal Prikladnaya Fizika

Analytical Model Used to Calculate Focal-Plane-Array Parameters

A. I. Patrashin, I. D. Burlakov, M. D. Korneeva, and V. V. Shabarov p. 311  abstract

Short-Wavelength Infrared Array Avalanche Photodetectors on the Basis
of InGaAs Heteroepitaxial Structures

N. I. Iakovleva, K. O. Boltar, M. V. Sednev, A. I. Patrashin, and N. A. Irodov p. 319  abstract

Focal Plane Arrays Mesastructures Formation by Ion-Beam Etching

M. V. Sednev, K. O. Boltar, Yu. P. Sharonov, and A. A. Lopukhin p. 324  abstract

Influence of Parameters of the Semiconductor–Dielectric Interface on the Current
of the Guard Ring of Silicon Photodiodes

S. S. Demidov and E. A. Klimanov p. 328  abstract

Investigation of the Surface Roughness of CdZnTe Substrates by Different Techniques
of Nanometer Accuracy

I. D. Burlakov, I. A. Denisov, A. L. Sizov, A. A. Silina, and N. A. Smirnova p. 333  abstract

Analytical Approach to Selection of the Optimum Structure of Avalanche Heterophotodiodes
Based on Direct Bandgap Semiconductors

V. A. Kholodnov, I. D. Burlakov, and A. A. Drugova p. 338  abstract

Temperature Dependence of Diffusion Length in MCT Epitaxial Layers

I. A. Nikiforov, A. V. Nikonov, K. O. Boltar, N. I. Iakovleva p. 344  abstract

320 256 Avalanche Array Photodetector on the Basis of Ternary Alloys
of the A3B5 Group with an InGaAs Absorbing Layer and an InAlAs Barrier Layer

N. I. Iakovleva, K. O. Boltar, M. V. Sednev, A. A. Lopukhin, and E. D. Korotaev p. 348  abstract

Properties of Correlators of Thermal and Photoinduced Stochastic Fields
of Charge-Carrier Concentrations and Currents in IR Photodiodes

A. Yu. Selyakov, I. D. Burlakov, and A. M. Filachev p. 352  abstract

Characteristics of Heteroepitaxial Structures AlxGa1–xN for pin Diode Focal Plane Arrays

D. V. Smirnov, K. O. Boltar, M. V. Sednev, and Yu. P. Sharonov p. 358 abstract


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