Influence of Microwave Plasma Microprocessing
on the Electronic Properties of the (100)Si Surface

R. K. Yafarov and S. A. Klimova

Chernyshevsky State University, Astrakhanskaya ul. 83, Saratov, 410012 Russia
e-mail: pirpc@yandex.ru

Received June 20, 2013

Abstract—The feasibility of controlling the electronic properties of the semiconductor surface by varying con-
ditions for its processing is considered. The study of electron transverse transport in heterostructures based on
a (100)Si single crystal and a tunnel-thin film of hydrogenized amorphous silicon carbide shows that the form
of the I–V characteristic of such structures depends on the density of dangling bonds on the surface. They arise
when silicon single crystals of a given orientation are subjected to microprocessing by a highly ionized micro-
wave plasma in different plasma-forming media to obtain an atomically clean surface.

DOI: 10.1134/S1063784214030281

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