Spectral Anisotropy of a Photoresponse from Heterojunctions
Based on GaSe and InSe Layered Crystals

V. N. Katerinchuk, Z. R. Kudrynskyi*, and Z. D. Kovalyuk

Frantsevich Institute for Problems in Materials Science, National Academy of Sciences of Ukraine, Chernovtsy, 58001
Ukraine
*e-mail: kudrynskyi@gmail.com

Received April 2, 2013

Abstract—The object of investigation is photoresponse spectra taken from the cleaved end face of heterojunctions
formed by GaSe and InSe anisotropic crystals. Spectra taken from the as-prepared and chemically processed faces
of the heterojunctions are compared. A modified method of growing GaSe crystals with a virgin end face is sug-
gested, and the surface of GaSe crystals thus grown is examined by atomic force microscopy.

DOI: 10.1134/S1063784214030141

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