Formation Conditions for InAs/GaAs Quantum Dot Arrays
by Droplet Epitaxy under MOVPE Conditions

R. Kh. Akchurin^a*, L. B. Berliner^a, I. A. Boginskaya^a, E. G. Gordeev^a, E. V. Egorova^a,
A. A. Marmalyuk^b, M. A. Ladugin^b, and M. A. Surnina^a

^a Lomonosov State University of Fine Chemical Technologies, pr. Vernadskogo 86, Moscow, 119573 Russia
^b OOO Sigm Plus, ul. Vvedenskogo 3, Moscow, 117342 Russia
*e-mail: rakchur@mail.ru

Received January 9, 2013

Abstract—The first stage of formation of InAs/GaAs quantum-dot heterostructures by droplet epitaxy is inves-
tigated. Factors influencing the geometrical size and density of arrays of indium nanodrops deposited by trim-
ethylindium pyrolysis on the GaAs(100) substrate are analyzed, and the possibility of using these factors in the
process of metal-organic vapor phase epitaxy (MOVPE) are studied. To refine the temperature dependence of
the In evaporation rate, a computational experiment taking into account real MOVPE conditions is conducted.
An ultimate change in the composition of In droplets contacting the substrate at a high temperature is estimated,
and the thickness and composition of crystallizing In–Ga–As solid solution are calculated. It is shown that the
size and density of the droplet array to a great extent depend on the crystallochemical structure of the substrate
surface and deposition conditions.

DOI: 10.1134/S1063784214010034

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