Hole Formation in Semiconductor Materials by Laser Microprocessing
V. L. Lanina, *, I. B. Petuhovb, **, and G. E. Retsiukhinb
a Belarusian State University of Informatics and Radioelectronics, Minsk, 220013 Belarus
b OAO Planar-SO, Minsk, 220033 Belarus
Correspondence to: *e-mail: vlanin@bsuir.by
Correspondence to: **e-mail: petuchov@kbtem.by
Received 20 July, 2022
Abstract—The process of laser formation of microholes in semiconductor substrates using an EM-4452-1 laser-processing unit with a pulse repetition frequency of a picosecond laser from 10 to 300 kHz at a radiation energy up to 10 μJ is investigated. The combination of high-speed movements of the laser beam by the galvanoscanner system and precise positioning of the processed material increases the efficiency of laser microprocessing and expands the functional capabilities of the equipment.
Keywords: laser radiation, holes, semiconductor substrates, microprocessing
DOI: 10.3103/S1068375523040075