Effect of Manganese Atoms on the Magnetic Properties of Silicon

O. E. Sattarov^a^, *, A. Mavlyanov^b, and A. An^a

^aAlmalyk Branch, Tashkent State Technical University, Almalyk, 110100 Uzbekistan

^bTashkent State Technical University, Tashkent, 100095 Uzbekistan

Correspondence to: *e-mail: sattorov_ol@mail.ru

Received 29 December, 2021

Abstract—It has been shown that the state of manganese atoms in the silicon lattice can be controlled with a view to varying the state and pattern of the magnetoresistance of the material. The laws governing changes in the magnetoresistance of silicon with manganese atoms (single atoms and clusters) as a function of temperature, illumination, and electric field have been determined.

Keywords: magnetoresistance, manganese atom clusters, negative magnetoresistance, silicon, conductivity

DOI: 10.3103/S106837552302014X