Extension of the Spectral Lasing Range of Semiconductor Lasers
in the Dispersive Resonator
M. N. Bairamova, S. I. Derzhavina†, Ya. V. Kravchenkoa, *, D. N. Mamonova,
M. D. Chebana, and V. P. Yakuninb
a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, 119991 Russia
b ILIT RAS —Branch of the FSRC “Crystallography and Photonics,” Russian Academy of Sciences,
Shatura, Moscow oblast, 140700 Russia
Correspondence to: *e-mail: kravch@kapella.gpi.ru
†Deceased.
Received 29 June, 2021
Abstract—It is experimentally found that at the tuning of the laser diode lasing wavelength in a spectrally selective external resonator to the shortwave region of the spectrum a range of wavelengths is manifested for which lasing depends on the previous state of the system, namely, at the shortwave boundary of the lasing spectrum there is a region of 913 to 918 nm in which lasing occurs only under continuous operation conditions and only at the preliminary shift of the lasing spectrum from the lower-energy spectrum region. This effect is supposed to be due to the distortion of the gain spectrum of the active medium when lasing occurs in it.
Keywords: spectral beam combining, diode lasers, extension of spectral lasing range
DOI: 10.3103/S1541308X21040014