Effect of Bismuth Nanolayers on the Oriented Growth
of Fullerene C₆₀ on an Amorphous Substrate

V. E. Pukha, V. V. Varganov, I. F. Mikhalov, and A. N. Drozdov

Kharkov Polytechnic Institute National Technical University, ul. Frunze 21, Kharkov, 61002 Ukraine

e-mail: puch@kpi.kharkov.ua

Received November 5, 2003

Abstract—The effect of a bismuth sublayer with an effective thickness of 0.5 to 4 nm on the structure of C₆₀
fullerene films grown on amorphous substrates (silicon covered with a natural oxide layer; glass) using the
quasi-closed-volume method is studied. An x-ray diffraction study of fullerene films showed that the intensity
ratio between the (220) and (111) peaks depends nonmonotonically on the sublayer thickness. In the bismuth
sublayer thickness range 0.5–2.0 nm, fullerene films are found to exhibit a growth texture with the 110 axis;
the average crystallite size was ~20 m. The quality of the texture can be improved by varying the fullerene
growth temperature. © 2004 MAIK “Nauka/Interperiodica”.

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