Mixed (Ionic and Hole) Conductivity of Tl₃VS₄ Crystals

B. V. Belyaev*, V. A. Gritskikh*, I. V. Zhikharev**, S. V. Kara-Murza*, and N. V. Korchikova*

* Shevchenko National Pedagogical University, Lugansk, 91011 Ukraine

** Donetsk Physicotechnical Institute, National Academy of Sciences of Ukraine, Donetsk, 83055 Ukraine

e-mail: mark@bm.dsip.net

Received November 10, 2003

Abstract—A model of mixed (ionic and hole) conductivity in Tl₃VS₄ crystals at close-to-room temperatures
is proposed. The significant fraction of the ionic conductivity component (~70% of the total conductivity) is
explained by the nonstoichiometric electrically active thallium vacancies, whose acceptor levels provide p-type
conductivity. The characteristic time dependence of the voltage developing across a sample due to its polariza-
tion and depolarization is described using the diffusion theory of mixed conductivity previously developed by
Yokota. The charge transport phenomena in Tl₃VS₄ are studied experimentally, and the data are processed
according to the theoretical model. © 2004 MAIK “Nauka/Interperiodica”.

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