Topology of an Anodically Formed Oxide Film
on a Silicon Single Crystal

A. M. Orlov, I. O. Yavtushenko*, and M. Yu. Makhmud-Akhunov

Ulyanovsk State University, ul. L’va Tolstogo 42, Ulyanovsk, 432017 Russia

* e-mail: yavigor@mail.ru

Received December 15, 2014

Abstract—The results of investigations of the morphological properties of an oxide film formed on single-
crystal silicon by anodic oxidation in distilled water in the potential-controlled mode have been presented. It
has been established that the oxide film is always formed in the form of separate islands, the shape of which
depends on the substrate orientation irrespective of the applied potential.

DOI: 10.1134/S1063783415080223

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