A. F. Zatsepin* and D. Yu. Biryukov**
Ural Federal University named after the First President of Russia B.N. Yeltsin,
ul. Mira 19, Yekaterinburg, 620002 Russia
* e-mail: a.f.zatsepin@urfu.ru
** e-mail: bir-70@list.ru
Received June 26, 2014; in final form, March 4, 2015
Abstract—The processes of excitation and relaxation of confined excitons in semiconductor quantum dots
upon indirect high-energy excitation have been considered. The temperature behavior of photoluminescence of
quantum dots in a SiO2 dielectric matrix has been described using a model accounting for the process of pop-
ulation of quantum-dot triplet states upon excitation transfer through mobile excitons of the matrix. Analytical
expressions that take into account the two-stage and three-stage schemes of relaxation transitions have been
obtained. The applicability of these expressions for analyzing fluorescence properties of semiconductor quan-
tum dots has been demonstrated using the example of silicon and carbon nanoparticles in the thin-film SiO2
matrix. It has been shown that the complex character of the temperature dependences of the photoluminescence
upon indirect excitation can be an indication of a multistage relaxation of excited states of the matrix and quan-
tum dots. The model concepts developed in this study allow one to predict the form of temperature dependences
of the photoluminescence for different schemes of indirect excitation of quantum dots.
DOI: 10.1134/S1063783415080363
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