Spectrum of ZnS
ZnSe Single Quantum Wells
N. V. Bondar’
Institute of Physics, National Academy of Sciences of Ukraine, pr. Nauki 144, Kiev, 258650 Ukraine
e-mail: vvti@iop.kiev.ua
Received January 24, 2000
Abstract—A study is reported on the dependence of exciton photoluminescence spectra of ZnS–ZnSe quantum
wells with different localization-center concentrations on the excitation intensity and temperature. The shape
of the experimental low-temperature photoluminescence band is shown to agree well with that calculated in a
model of exciton hopping to the nearest localization center and in one that takes into account transitions of a
localized exciton to all centers in its local environment. The parameters characterizing localized excitons in
these quantum structures of a submonolayer thickness have been determined. © 2000 MAIK “Nauka/Interpe-
riodica”.
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