Physics of the Solid State. Vol. 58, No. 7, Pages 1448-1452, 2016

S. A. Kukushkin^a^,^b^,^c^,*, A. V. Osipov^a^,^b, and A. I. Romanychev^dTranslated by O. Borovik-Romanova

^aInstitute of Problems of Mechanical Engineering, Russian Academy of Sciences, Bolshoi pr. 61, St. Petersburg, 199178 Russia

^bSt. Petersburg National Research University of Information Technologies, Mechanics and Optics, Kronverkskii pr. 49, St. Petersburg, 197101 Russia

^cPeter the Great St. Petersburg Polytechnic University, ul. Politekhnicheskaya 29, St. Petersburg, 195251 Russia

^dSt. Petersburg State University, Universitetskaya nab. 7–9, St. Petersburg, 199034 Russia

Abstract—For the first time, zinc oxide epitaxial films on silicon were grown by the method of atomic layer deposition at a temperature T = 250°C. In order to avoid a chemical reaction between silicon and zinc oxide (at the growth temperature, the rate constant of the reaction is of the order of 10²²), a high-quality silicon carbide buffer layer with a thickness of ~50 nm was preliminarily synthesized by the chemical substitution of atoms on the silicon surface. The zinc oxide films were grown on n- and p-type Si(100) wafers. The ellipsometric, Raman, electron diffraction, and trace element analyses showed that the ZnO films are epitaxial.

Epitaxial Growth of Zinc Oxide by the Method of Atomic Layer Deposition on SiC/Si Substrates