Surface Morphology and Raman Spectroscopy of Thin Layers of Antimony and Bismuth Chalcogenides

L. N. Luk’yanovaa, *, A. Yu. Bibikb, V. A. Aseevb, **, O. A. Usova, I. V. Makarenkoa, V. N. Petrova, N. V. Nikonorovb, and V. A. KutasovaTranslated by O. Zhukova

aIoffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 Russia

bNational Research University of Information Technologies, Mechanics, and Optics, Kronverkskii pr. 49, St. Petersburg, 197101 Russia

Correspondence to: *e-mail: Lidia.lukyanova@mail.ioffe.ru **e-mail: aseev@io.itmo.ru

Received 7 December, 2015

Abstract—The phonon spectra in thin layers of bismuth telluride and solid solutions of Bi2 – xSbxTe3 – ySey of different composition, belonging to three-dimensional topological insulators, have been investigated by micro-Raman spectroscopy, and the morphology of an interlayer van der Waals (0001) surface in them has been studied by semicontact atomic force microscopy at room temperature. The analysis of the Raman spectra and the intensity ratio of active and inactive longitudinal optical modes depending on the composition, morphology of the interlayer surface, and thickness of the layers enabled the estimation of the effect of topological surface states of Dirac fermions, associated with the strengthening of the electron–phonon interaction as a result of resonance Raman scattering, and the identification of the compositions, in which the contribution of topological surface states becomes dominant.

DOI: 10.1134/S1063783416070258