Effective Masses and g Factors of Electrons
in Excited States at the Point in IIIV Semiconductors

V. D. Dymnikov* and O. V. Konstantinov

Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 Russia

e-mail: Dymnik@mail.ioffe.ru

Received July 8, 2008

Abstract—The numerical estimates of the effective masses and g factors of electrons in the excited conduction
bands at the point in III–V semiconductors are obtained in the scientific literature for the first time. The cal-
culations are performed using the new approach developed in our previous works and based on the sum rules.

PACS numbers: 71.20.Nr, 71.18.+y

DOI: 10.1134/S1063783409050023

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