Deep Levels of Nitrogen Vacancy Complexes
in Graphite-like Boron Nitride

S. N. Grinyaev, F. V. Konusov, and V. V. Lopatin

Research Institute of High-Voltage Equipment, Tomsk Polytechnical University, Tomsk, 634050 Russia

e-mail: kabyshev@hvd.tpu.ru

Received April 5, 2001

Abstract—This paper presents the results of a theoretical study of deep nitrogen vacancy levels and of small
clusters of nitrogen di- and trivacancies, including the nearest neighbor defects in one layer of graphite-like
boron nitride, made using the model-pseudopotential and supercell methods. The calculated spectra and oscil-
lator strengths were used to interpret the local bands of optical absorption, luminescence, and photoconductivity
in pyrolytic boron nitride before and after irradiation by fast neutrons, protons, and carbon ions (50–150 keV).
The shallow activation levels of thermally stimulated luminescence and conductivity existing before and arising
after irradiation were identified. © 2002 MAIK “Nauka/Interperiodica”.

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