Electrical, Optical, and Photoelectric Properties
of Electron-Irradiated Indium-Doped Cadmium
Sulfide Single Crystals

G. E. Davidyuk*, V. A. Oksyuta*, and V. S. Manzhara**

* Volyn State University, pr. Voli 13, Lutsk, 44009 Ukraine

e-mail: viktor@lab.univer.lutsk.ua

** Institute of Physics, National Academy of Sciences, pr. Nauki 46, Kiev, 04050 Ukraine

Received January 26, 2001; in final form, June 28, 2001

Abstract—The effect of irradiation by 1.2-MeV electrons to a dose = 2 10¹⁷ cm^–2 on the electrical, optical,
and photoelectric properties of In-doped CdS single crystals was studied. The experimental data obtained per-
mit one to conclude that irradiation initiates decomposition of the supersaturated In solution in CdS, with the
indium atoms at the sites of the cation sublattice being expelled by cadmium interstitial atoms. New slow-
recombination centers were observed to exist in the irradiated CdS:In samples, with the maxima of optical
quenching of the photoconductivity lying in the region of = 0.75 m and = 1.03 m. It is suggested
thatthe new recombination centers are related to complexes containing cadmium vacancies and indium atoms.
© 2002 MAIK “Nauka/Interperiodica”.

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