N. A. Poklonski and S. Yu. Lopatin
Belarussian State University, pr. F. Skoriny 4, Minsk, 220050 Belarus
e-mail: poklonski@bsu.by
Received April 13, 2001
Abstract—A model for describing hopping thermopower is proposed. Within the model, the majority and com-
pensating impurities form a simple cubic lattice in a crystal matrix. The thermopower associated with hole
(electron) hopping over hydrogen-like impurities is calculated with inclusion of their excited states. The results
of calculations are compared with available experimental data on the low-temperature thermopower of Ge : Ga
and the specific heat of Si : P in the dielectric region of the insulator–metal transition. © 2001 MAIK
“Nauka/Interperiodica”.
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