Amorphization of Molybdenum upon Implantation
of Silicon Ions

A. N. Tyumentsev, A. D. Korotaev, Yu. P. Pinzhin, A. F. Safarov, O. V. Panin,
S. P. Bugaev, and P. M. Shchanin

Kuznetsov Physicotechnical Institute, pl. Revolutsii 1, Tomsk, 634050 Russia

Received November 20, 1996

Abstract—Amorphization of molybdenum and its dependence on the composition of the gaseous medium
upon high-dose implantation of silicon ions were studied using transmission electron microscopy. It is shown
that radiation-induced interaction of the molybdenum surface with the reactive constituents (C, N) of the
implanter gaseous media play an important role in amorphization upon silicon implantation. The sequence of
structural and phase transformations preceding amorphization was studied. Amorphous state with an anisotro-
pic electron-scattering intensity radial distribution function was observed for the first time. Mechanisms of
amorphization and the structure of amorphous state are discussed.

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