Influence of Bismuth on Dark Current Relaxation
in As₂Se₃ Layers

V. T. Avanesyan, V. A. Bordovskii, and R. A. Castro

Herzen Russian State Pedagogical University, nab. r. Moiki 48, St. Petersburg, 191186 Russia

Received August 12, 1997

Abstract—The effect of bismuth on relaxation processes in As₂Se₃-based layered structures is investigated.
Conduction activation energy and effective relaxation time are found to decrease with an increase in the bismuth
dope content in the glass structure.

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