A Pseudobinary Model of the SemiconductorMetal Transition
in Vitrifying Melts

V. A. Funtikov

Kaliningrad State University, ul. Universitetskaya 2, Kaliningrad, 236040 Russia

Received April 1, 1995

Abstract—A physicochemical approach to analysis of structural transformations that proceed in semiconduct-
ing vitrifying melts during the semiconductor–metal transition is advanced. The pseudobinary model for this
transition is based on the concept of quasi-components and the principles of physicochemical analysis. It is pos-
tulated that the character of interactions between components in the semiconductor–metal systems is identical
to that in the melts in the temperature range of a semiconductor–metal smeared phase transition. According to
the proposed model, the number of components in the melts increases and the phase-separated microinhomo-
geneity is formed in the region of smeared phase transition.

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