Ion-Beam Synthesis of a Hidden Lead-Silicate Layer in Single-Crystal Silicon

Abstract—The features of the formation of a hidden lead-silicate insulating layer in silicon substrates are considered. To do this, ions of molecular oxygen and lead are sequentially implanted into them in an atomic ratio of 75 : 1 then annealing is carried out at a temperature of 1150°C in an environment of dry oxygen. The distribution of the implanted ions in the experimental samples is recorded by the method of secondary ion mass spectrometry. It is shown that the latent insulator is formed in the process of the spinodal decomposition of a solid solution of SiO_x–PbO_x in the form of a three-layer structure. Its middle part is silicon dioxide doped with lead ions and the side parts consist of a lead-silicate phase. A relaxation diffusion model is proposed to analyze the distribution profile of lead.