Films of Hydrogenated Silicon Oxycarbonitride.
Part I. Chemical and Phase Composition

N. I. Fainer, A. G. Plekhanov, Yu. M. Rumyantsev, E. A. Maximovskii, and V. R. Shayapov

Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences,
pr. Akad. Lavrent’eva 3, Novosibirsk, 630090 Russia

e-mail: nadezhda@niic.nsc.ru

Received November 22, 2013

AbstractThe method of preparation of hydrogenated silicon oxycarbonitride films with variable composi-
tion SiCxNyOz : H by the plasma chemical vapor decomposition of a volatile organosilicon compound,
1,1,1,3,3,3-hexamethyldisilazane (enhanced to IUPAC, bis(trimethylsilyl)amine) in a gas phase containing
nitrogen and oxygen in the temperature range of 373–973 K has been developed. It has been shown that nitrogen
and oxygen provide the decrease in carbon content in films due to gas-phase reaction giving volatile products
(CN)2, CH4, CO, and H2(H). The obtained SiCxNyOz : H films are nanocomposite, in the amorphous part of
which the nanocrystals are distributed, which belong to the determined phases of the Si–C–N system, namely,
-Si3N4, -Si3–xCxN4, and graphite.

Keywords: silicon oxycarbonitride thin films, plasma chemical synthesis, nanocomposite films, phases of the
- Si3–xCxN4 family

DOI: 10.1134/S1087659614050034

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