Structural Peculiarities of Amorphous Semiconductors
As_33.3Se_33.3S_33.4 and As_33.3Se_33.3Te_33.4 Doped with Samarium

R. I. Alekberov, G. A. Isayeva, S. I. Mekhtiyeva, and A. I. Isayev

Abdulayev Institute of Physics, Academy of Sciences of Azerbaijan, pr. G. Djavida 33, Baku, AZ 1143 Azerbaijan

e-mail: Rahim-14@mail.ru

Received October 10, 2013

Abstract—The structure of chalcogenide vitreous semiconductors (CVSs) As_33.3Se_33.3S_33.4 and
As_33.3Se_33.3Te_33.4 and the influence on them of samarium additives is studied using the technique of X-ray dif-
fraction. The observed peculiarities of the diffraction picture are explained by the Elliott void-cluster model.
The structural parameters of CVS materials As_33.3Se_33.3S_33.4 and As_33.3Se_33.3Te_33.4 with and without admixtures
of samarium are determined.

Keywords: chalcogenide glass, X-ray diffraction

DOI: 10.1134/S1087659614050022

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