Investigation of the Physicochemical Properties, Structure,
and Composition of Nanosized Borosilicate Films Prepared
by the SolGel Method

I. V. Smirnova^a, O. A. Shilova^a, V. A. Moshnikov^b, M. F. Panov^b,
V. V. Shevchenko^c, and N. S. Klimenko^c

^a Grebenshchikov Institute of Silicate Chemistry, Russian Academy of Sciences,
ul. Odoevskogo 24/2, St. Petersburg, 199155 Russia

^b St. Petersburg State University of Electrical Engineering, ul. Professora Popova 5, St. Petersburg, 197376 Russia

^c Institute of Chemistry of Macromolecular Compounds, National Academy of Sciences of Ukraine,
Khar’kovskoe sh. 48, Kiev, 02160 Ukraine

Received November 4, 2005

Abstract—This paper reports on the results of investigations into the specific features of the deposition of
hybrid organic–inorganic borosilicate films prepared by the sol–gel method for the use in the planar technology
of microelectronics. In order to modify the properties of the borosilicate films, a number of water-soluble
hydroxyl-containing oligomers (with different molecular topologies and different molecular weights from 300
to 5100 g/mol) are introduced into the sol–gel system. The effect of these polyols on the sol viscosity, the thick-
ness, and the surface morphology of the synthesized films is revealed by viscometry, ellipsometry, optical
microscopy, atomic-force microscopy, and thermal analysis. These films are designed for the use as sources for
boron diffusion into silicon in order to fabricate heavily doped diffusion layers with a dopant concentration of
(5–7) 10²⁰ cm^–3. The depth of occurrence of diffusion layers is approximately equal to 4 m.

DOI: 10.1134/S1087659606040109

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