Photoinduced Metastability of Charged Defect States
in Thin Layers of As₄₀S₃₀Se₃₀ Chalcogenide Semiconductors

G. A. Bordovskii, R. A. Castro, and T. V. Taturevich

Herzen Russian State Pedagogical University, nab. Moiki 48, St. Petersburg, 191186 Russia

Received February 22, 2006

Abstract—The results of investigations into the influence of irradiation on the relaxation characteristics of the
As₄₀S₃₀Se₃₀ electrophotographic system are presented. It is found that prolonged illumination of the samples
leads to changes in the kinetics of photocurrent build-up and decay, affects the distribution of relaxation oscil-
lators, and brings about the transformation of the spectrum of localized states in the vicinity of the conduction
band bottom.

DOI: 10.1134/S1087659606040055

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