The Origin of the Electrical Inactivity of Iron and Tin Impurity
Atoms in Crystalline and Vitreous Alloys A^IIIB^IV
(A = Ga, In; B = Te, S)

R. A. Castro and F. S. Nasredinov

Herzen Russian State Pedagogical University, nab. Reki Moiki 48, St. Petersburg, 191186 Russia

Received December 26, 2005

Abstract—Tin and iron impurity atoms in the structure of crystalline and vitreous alloys Ga_1–yTe_y (y = 0.6,
0.8) and In_1–yTe_y (y = 0.6) are shown to be stabilized in their normal valence states. It is demonstrated that the
electrical inactivity of tin and iron impurity ions is caused by the compensating effect of Ga⁺ and In⁺ ions, which
are responsible for the fixed position of the Fermi level at the midpoint of the band gap. Tin impurity ions in the
structure of the -In₂S₃ crystal are analogs of two-electron centers (with a negative Hubbard energy) proposed
for chalcogenide glasses. Within this model, Sn²⁺ ions are ionized acceptors and Sn⁴⁺ ions are ionized donors.

DOI: 10.1134/S1087659606040043

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