Plasma-Chemical Synthesis of Silicon Carbonitride Films
from Trimethyl(diethylamino)silane

M. L. Kosinova^a,*, Yu. M. Rumyantsev^a, L. I. Chernyavskii^a, L. D. Nikulina^a, V. G. Kesler^b,
E. A. Maximovskii^a, N. I. Fainer^a, V. I. Rakhlin^c, M. G. Voronkov^{c, d}, and F. A. Kuznetsov^a

^aNikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences,
pr. Akademika Lavrent’eva 3, Novosibirsk, 630090 Russia

*e-mail: marina@niic.nsc.ru

^bRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences,
pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia

^cFavorsky Irkutsk Institute of Chemistry, Siberian Branch, Russian Academy of Sciences,
ul. Favorskogo 1, Irkutsk, 664033 Russia

^dGrebenshchikov Institute of Silicate Chemistry, Russian Academy of Sciences,
nab. Admirala Makarova 2, St. Petersburg, 199034 Russia

Received February 3, 2010

Abstract—Silicon carbonitride films of different compositions have been synthesized by plasma-enhanced
chemical vapor deposition with the use of trimethyl(diethylamino)silane as the initial compound. The condi-
tions used for the deposition of the films have been chosen from the thermodynamic modeling. The properties
of the films prepared have been investigated using ellipsometry, scanning electron microscopy, X-ray photo-
electron spectroscopy, IR spectroscopy, and synchrotron X-ray powder diffraction. It has been established that
the synthesis temperature substantially affects the kinetics of growth and physicochemical properties of silicon
carbonitride layers in the range of synthesis conditions under investigation. The films prepared consist of nano-
particles whose size increases with increasing synthesis temperature. The refractive index of the films increases
from 1.6 to 2.8 with an increase in the temperature.

Key words: plasma-enhanced chemical vapor deposition, thin films, silicon carbonitride, trimethyl(diethy-
lamino)silane

DOI: 10.1134/S1087659610040152

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